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1. WO2020094389 - FAILURE MODEL FOR PREDICTING FAILURE DUE TO RESIST LAYER

Publication Number WO/2020/094389
Publication Date 14.05.2020
International Application No. PCT/EP2019/078706
International Filing Date 22.10.2019
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/705
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
G03F 7/70616
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • HANSEN, Steven, George
Agents
  • PETERS, John Antoine
Priority Data
62/757,38608.11.2018US
62/914,16811.10.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FAILURE MODEL FOR PREDICTING FAILURE DUE TO RESIST LAYER
(FR) MODÈLE DE DÉFAILLANCE POUR PRÉDIRE UNE DÉFAILLANCE DUE À UNE COUCHE DE RÉSERVE
Abstract
(EN)
A method of determining a failure model of a resist process of a patterning process. The method includes obtaining (i) measured data of a pattern failure (e.g., failure rate) related to a feature printed on a wafer based on a range of values of dose, and (ii) an image intensity values for the feature via simulating a process model using the range of the dose values; and determining, via fitting the measured data of the pattern failure to a product of the dose values and the image intensity values, a failure model to model a stochastic behavior of spatial fluctuations in the resist and predict failure of the feature (e.g., hole closing).
(FR)
L'invention concerne un procédé de détermination d'un modèle de défaillance d'un processus de réserve d'un processus de formation de motifs. Le procédé comprend l'obtention (i) de données mesurées d'une défaillance de motif (par exemple un taux de défaillance) associées à une caractéristique imprimée sur une galette sur la base d'une plage de valeurs de dose, et (ii) de valeurs d'intensité d'image pour la caractéristique par simulation d'un modèle de processus en utilisant la plage des valeurs de dose ; et la détermination, par ajustement des données mesurées de la défaillance de motif à un produit des valeurs de dose et des valeurs d'intensité d'image, d'un modèle de défaillance en vue de modéliser un comportement stochastique de fluctuations spatiales dans la réserve et prédire une défaillance de la caractéristique (par exemple la fermeture de trou).
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