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1. WO2020094325 - DETERMINING A CORRECTION TO A PROCESS

Publication Number WO/2020/094325
Publication Date 14.05.2020
International Application No. PCT/EP2019/077353
International Filing Date 09.10.2019
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G05B 13/02 2006.01
GPHYSICS
05CONTROLLING; REGULATING
BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
13Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
02electric
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • ROY, Sarathi
  • HULSEBOS, Edo, Maria
  • WERKMAN, Roy
  • RUAN, Junru
Agents
  • PETERS, John Antoine
Priority Data
18204882.707.11.2018EP
19150953.809.01.2019EP
19173992.913.05.2019EP
19199505.925.09.2019EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DETERMINING A CORRECTION TO A PROCESS
(FR) DÉTERMINATION DE CORRECTION DE PROCESSUS
Abstract
(EN)
A method for configuring a semiconductor manufacturing process, the method comprising: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.
(FR)
La présente invention concerne un procédé de configuration d'un processus de fabrication de semi-conducteur, le procédé consistant à : obtenir une première valeur d'un premier paramètre sur la base de mesures associées à une première opération d'une étape de traitement dans le processus de fabrication de semi-conducteur et un premier schéma d'échantillonnage ; utiliser un réseau neuronal récurrent pour déterminer une valeur prédite du premier paramètre sur la base de la première valeur ; et à utiliser la valeur prédite du premier paramètre lors de la configuration d'une opération ultérieure de l'étape de processus dans le processus de fabrication de semi-conducteur.
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