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1. WO2020093442 - METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND ARRAY SUBSTRATE

Publication Number WO/2020/093442
Publication Date 14.05.2020
International Application No. PCT/CN2018/116043
International Filing Date 16.11.2018
IPC
H01L 21/77 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 27/124
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
124with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Applicants
  • 深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 朱茂霞 ZHU, Maoxia
  • 徐洪远 XU, Hongyuan
Agents
  • 深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE
Priority Data
201811320935.207.11.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND ARRAY SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT DE RÉSEAU ET SUBSTRAT DE RÉSEAU
(ZH) 阵列基板的制作方法及阵列基板
Abstract
(EN)
A method for manufacturing an array substrate, and an array substrate. The method for manufacturing an array substrate comprises: first forming, on a base substrate (1), a transparent conductive thin film (101) and a metallic thin film (102) covering the transparent conductive thin film (101), and patterning, by means of one photomask, the transparent conductive thin film (101) and the metallic thin film (102) to form a gate electrode (2) formed by the transparent conductive thin film (101) and the metallic thin film (102) and an array substrate common electrode (3) formed by the transparent conductive thin film (101). The transparent array substrate common electrode (3) can increase the pixel aperture ratio and improve the display effect, and the gate electrode (2) and the array substrate common electrode (3) are still only made from one photomask, without increasing the amount of photomasks, and therefore, the manufacturing cost is relatively low.
(FR)
La présente invention concerne un procédé de fabrication d'un substrat de réseau et un substrat de réseau. Le procédé de fabrication d'un substrat de réseau comprend les étapes consistant à : former en premier lieu, sur un substrat de base (1), un film mince conducteur transparent (101) et un film mince métallique (102) recouvrant le film mince conducteur transparent (101), et former des motifs, au moyen d'un photomasque, sur le film mince conducteur transparent (101) et le film mince métallique (102) pour former une électrode grille (2) formée par le film mince conducteur transparent (101) et le film mince métallique (102) et une électrode commune de substrat de réseau (3) formée par le film mince conducteur transparent (101). L'électrode commune de substrat de réseau transparent (3) peut augmenter le rapport d'ouverture de pixel et améliorer l'effet d'affichage, et l'électrode grille (2) et l'électrode commune de substrat de réseau (3) sont toujours uniquement fabriqués à partir d'un photomasque, sans augmenter la quantité de photomasques, et par conséquent, le coût de fabrication est relativement faible.
(ZH)
一种阵列基板的制作方法及阵列基板,所述阵列基板的制作方法为先在衬底基板(1)上形成透明导电薄膜(101)和覆盖所述透明导电薄膜(101)的金属薄膜(102),并通过一道光罩图案化所述透明导电薄膜(101)和金属薄膜(102),形成由透明导电薄膜(101)和金属薄膜(102)形成的栅极(2)和由透明导电薄膜(101)形成的阵列基板公共电极(3)。所述透明的阵列基板公共电极(3)能够提升像素开口率,改善显示效果,且栅极(2)和阵列基板公共电极(3)仍通过一道光罩制得,无需增加光罩数量,制作成本较低。
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