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1. WO2020092722 - METHOD OF OBTAINING A SMOOTH SURFACE WITH EPITAXIAL LATERAL OVERGROWTH

Publication Number WO/2020/092722
Publication Date 07.05.2020
International Application No. PCT/US2019/059086
International Filing Date 31.10.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/20 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01L 33/46 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
H01S 5/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US]
Inventors
  • KAMIKAWA, Takeshi
  • GANDROTHULA, Srinivas
Agents
  • GATES, George H.
Priority Data
62/753,22531.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF OBTAINING A SMOOTH SURFACE WITH EPITAXIAL LATERAL OVERGROWTH
(FR) PROCÉDÉ D'OBTENTION D'UNE SURFACE LISSE AVEC SURCROISSANCE LATÉRALE ÉPITAXIALE
Abstract
(EN)
A method for obtaining a smooth surface of an epi-layer with epitaxial lateral overgrowth. The method does not use mis-cut orientations and does not suppress the occurrence of pyramidal hillocks, but instead embeds the pyramidal hillocks in the epi-layer. A growth restrict mask is used to limit the expansion of the pyramidal hillocks in a lateral direction. The surface of the epi-layer becomes extremely smooth due to the disappearance of the pyramidal hillocks.
(FR)
L'invention concerne un procédé d'obtention d'une surface lisse d'une couche épitaxiale présentant une surcroissance latérale épitaxiale. Le procédé n'utilise pas d'orientations désorientées et ne supprime pas l'apparition de collines pyramidales, mais incorpore à la place les collines pyramidales dans la couche épitaxiale. Un masque de limitation de croissance est utilisé pour limiter l'expansion des collines pyramidales dans une direction latérale. La surface de la couche épitaxiale devient extrêmement lisse en raison de la disparition des collines pyramidales.
Latest bibliographic data on file with the International Bureau