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1. WO2020092393 - SYSTEMS AND METHODS FOR MANUFACTURING MICROELECTRONIC DEVICES

Publication Number WO/2020/092393
Publication Date 07.05.2020
International Application No. PCT/US2019/058597
International Filing Date 29.10.2019
IPC
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
G06K 9/00 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
9Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
CPC
B81C 1/00261
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00261Processes for packaging MEMS devices
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Applicants
  • TOKYO ELECTRON LIMITED [JP]/[JP]
  • TOKYO ELECTRON U.S. HOLDINGS, INC. [US]/[US] (JP)
Inventors
  • FONSECA, Carlos A.
  • IP, Nathan
Agents
  • CHAKRAVARTHI, Srinivasan
Priority Data
16/666,08728.10.2019US
62/753,15331.10.2018US
62/753,15531.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEMS AND METHODS FOR MANUFACTURING MICROELECTRONIC DEVICES
(FR) SYSTÈMES ET PROCÉDÉS DE FABRICATION DE DISPOSITIFS MICROÉLECTRONIQUES
Abstract
(EN)
In one embodiment, a method includes obtaining wafer measurements of a characteristic of a semiconductor wafer at each of a plurality of process steps during a semiconductor wafer fabrication process (block 811), where each of the wafer measurements is associated with a spatial location on the semiconductor wafer from which the measurement is obtained. The method may further include creating a process step fingerprint from the obtained wafer measurements for each process step (block 812). The method may further include correlating the process step fingerprint of one of the plurality of process steps to the process step fingerprint of another one of the plurality of process steps to produce a transfer function (block 813).
(FR)
Dans un mode de réalisation, un procédé comprend l'obtention de mesures de tranche d'une caractéristique d'une tranche de semi-conducteur au niveau de chacune d'une pluralité d'étapes de traitement pendant un processus de fabrication de tranche de semi-conducteur (bloc 811), chacune des mesures de tranche étant associée à un emplacement spatial sur la tranche de semi-conducteur à partir duquel la mesure est obtenue. Le procédé peut en outre comprendre la création d'une empreinte d'étape de traitement à partir des mesures de tranche obtenues pour chaque étape de traitement (bloc 812). Le procédé peut en outre comprendre la corrélation de l'empreinte d'étape de traitement de l'une de la pluralité d'étapes de traitement avec l'empreinte d'étape de traitement d'une autre étape parmi la pluralité d'étapes de traitement pour produire une fonction de transfert (bloc 813).
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Latest bibliographic data on file with the International Bureau