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1. WO2020092347 - MAGNETORESISTIVE DEVICES AND METHODS THEREFOR

Publication Number WO/2020/092347
Publication Date 07.05.2020
International Application No. PCT/US2019/058532
International Filing Date 29.10.2019
IPC
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H01L 43/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
12Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
Applicants
  • EVERSPIN TECHNOLOGIES, INC. [US]/[US]
Inventors
  • SUN, Jijun
  • CHIA, Han-Jong
  • DESHPANDE, Sarin
  • DEMIRAY, Ahmet
Agents
  • PORTIS, Jason
Priority Data
62/752,66730.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MAGNETORESISTIVE DEVICES AND METHODS THEREFOR
(FR) DISPOSITIFS MAGNÉTORÉSISTIFS ET PROCÉDÉS ASSOCIÉS
Abstract
(EN)
A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or more dielectric layers. The fixed magnetic region may include a first ferromagnetic region, a coupling layer, a second ferromagnetic region, a transition layer disposed, a reference layer, and at least one interfacial layer disposed above the second ferromagnetic region. Another interfacial layer may be disposed between the one or more dielectric layers and the free magnetic region.
(FR)
L'invention concerne un empilement magnétorésistif qui comprend une région magnétique fixe, une ou plusieurs couches diélectriques disposées sur la région magnétique fixe et en contact avec elle, et une région magnétique libre disposée au-dessus de la ou des couches diélectriques. La région magnétique fixe peut comprendre une première région ferromagnétique, une couche de couplage, une seconde région ferromagnétique, une couche de transition disposée, une couche de référence, et au moins une couche interfaciale disposée au-dessus de la seconde région ferromagnétique. Une autre couche interfaciale peut être disposée entre la ou les couches diélectriques et la région magnétique libre.
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