Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020092287 - QUAD FLAT NO-LEADS PACKAGE FOR SIDE EMITTING LASER DIODE

Publication Number WO/2020/092287
Publication Date 07.05.2020
International Application No. PCT/US2019/058432
International Filing Date 29.10.2019
IPC
H01S 5/022 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
CPC
H01S 5/02228
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02228filled with a resin, or the complete housing being made of resin
H01S 5/02244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02244Lead-frames, e.g. the laser is mounted on a lead frame or on a stem
H01S 5/02256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
02236Mounts or sub-mounts
02256Details of fixing the laser diode on the mount
H01S 5/0228
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
022Mountings; Housings
0228Out-coupling light
Applicants
  • EXCELITAS CANADA, INC. [CA]/[CA]
  • EXCELITAS TECHNOLOGIES CORP. [US]/[US] (BZ)
Inventors
  • GODFREY, Lawrence
Agents
  • WHITCOMB, Jonathan, B.
Priority Data
62/754,17601.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) QUAD FLAT NO-LEADS PACKAGE FOR SIDE EMITTING LASER DIODE
(FR) BOÎTIER PLAT QUADRUPLE SANS FIL POUR DIODE LASER À ÉMISSION LATÉRALE
Abstract
(EN)
A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.
(FR)
L'invention concerne un boîtier de semi-conducteur qui est fabriqué en attachant physiquement une diode laser à émission latérale à une partie de plancher d'un boîtier sans fil plat en creux (FNL) ayant une paroi s'étendant depuis et entourant un périmètre d'une partie de plancher en creux. La diode laser à émission latérale fixée est orientée pour diriger un faisceau laser vers une partie opposée de la paroi. Le boîtier FNL est séparé en une première pièce et une seconde pièce le long d'un plan de séparation à travers la paroi de boîtier FNL et la partie plancher entre la diode laser à émission latérale et la partie opposée de la paroi. Après la séparation, la partie opposée de la paroi se trouve dans la seconde pièce et la diode laser à émission latérale est dans la première pièce.
Latest bibliographic data on file with the International Bureau