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1. WO2020092280 - SHAPE-DISTORTION STANDARDS FOR CALIBRATING MEASUREMENT TOOLS FOR NOMINALLY FLAT OBJECTS

Publication Number WO/2020/092280
Publication Date 07.05.2020
International Application No. PCT/US2019/058417
International Filing Date 29.10.2019
IPC
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
CPC
G01B 11/306
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
11Measuring arrangements characterised by the use of optical means
30for measuring roughness or irregularity of surfaces
306for measuring evenness
G01B 2210/56
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
2210Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
H01L 21/67288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67288Monitoring of warpage, curvature, damage, defects or the like
H01L 22/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
12for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
H01L 22/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Applicants
  • KLA CORPORATION [US]/[US]
Inventors
  • QULI, Farhat
  • CHOW, Winfred
Agents
  • MCANDREWS, Kevin
  • MORRIS, Elizabeth M.N.
Priority Data
16/664,78825.10.2019US
62/752,20029.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SHAPE-DISTORTION STANDARDS FOR CALIBRATING MEASUREMENT TOOLS FOR NOMINALLY FLAT OBJECTS
(FR) NORMES DE DISTORSION DE FORME POUR ÉTALONNER DES OUTILS DE MESURE POUR DES OBJETS NOMINALEMENT PLATS
Abstract
(EN)
A first nominally flat object is obtained that has a controlled warpage that has been measured in a manner traceable through a standard reference material to a fundamental unit of measurement. A measurement tool is calibrated using the first nominally flat object. After calibrating the measurement tool using the first nominally flat object, the warpage of a plurality of nominally flat objects is measured using the measurement tool, wherein the plurality of nominally flat objects is distinct from the first nominally flat object.
(FR)
L'invention concerne un premier objet nominalement plat obtenu qui a un gauchissement commandé qui a été mesuré d'une manière traçable à travers un matériau de référence normalisé à une unité de mesure fondamentale. Un outil de mesure est étalonné à l'aide du premier objet nominalement plat. Après l'étalonnage de l'outil de mesure à l'aide du premier objet nominalement plat, le gauchissement d'une pluralité d'objets nominalement plats est mesuré à l'aide de l'outil de mesure, la pluralité d'objets nominalement plats étant distincte du premier objet nominalement plat.
Also published as
Latest bibliographic data on file with the International Bureau