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1. WO2020092244 - ELECTRODEPOSITION OF NANOTWINNED COPPER STRUCTURES

Publication Number WO/2020/092244
Publication Date 07.05.2020
International Application No. PCT/US2019/058354
International Filing Date 28.10.2019
IPC
C25D 5/18 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
18Electroplating using modulated, pulsed or reversing current
C25D 5/10 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
10Electroplating with more than one layer of the same or of different metals
C25D 7/12 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
7Electroplating characterised by the article coated
12Semiconductors
C25D 3/38 2006.01
CCHEMISTRY; METALLURGY
25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
3Electroplating; Baths therefor
02from solutions
38of copper
H01L 21/288 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
288from a liquid, e.g. electrolytic deposition
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • BANIK II, Stephen, J.
  • BUCKALEW, Bryan, L.
  • OBERST, Justin
  • DUA, Bhuvan
  • NEUMANN, Anica, Nicole
  • PONNUSWAMY, Thomas, Anand
Agents
  • HO, Michael, T.
  • WEAVER, Jeffrey, K.
  • AUSTIN, James, E.
  • VILLENEUVE, Joseph, M.
  • SAMPSON, Roger, S.
  • GRIFFITH, John, F.
  • BERGIN, Denise, S.
  • SCHOLZ, Christian, D.
Priority Data
62/753,84631.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ELECTRODEPOSITION OF NANOTWINNED COPPER STRUCTURES
(FR) ÉLECTRODÉPOSITION DE STRUCTURES DE CUIVRE NANOMACLÉ
Abstract
(EN)
A copper structure having a high density of nanotwins is deposited on a substrate. Electroplating conditions for depositing a nanotwinned copper structure may include applying a pulsed current waveform that alternates between a constant current and no current, where a duration of no current being applied is substantially greater than a duration of a constant current being applied. In some implementations, the nanotwinned copper structure is deposited by applying a pulsed current waveform followed by a constant current waveform. In some implementations, the nanotwinned copper structure is deposited on a highly-oriented base layer, where an electroplating solution contains an accelerator additive. In some implementations, the nanotwinned copper structure is deposited on a non-copper seed layer. In some implementations, the nanotwinned copper structure is deposited at a relatively low flow rate.
(FR)
La présente invention concerne une structure de cuivre ayant une densité élevée de nanomacles qui est déposée sur un substrat. Les conditions de dépôt électrolytique pour déposer une structure de cuivre nanomaclé peuvent comprendre l'application d'une forme d'onde de courant pulsé qui alterne entre un courant constant et aucun courant, une durée sans courant appliqué étant sensiblement supérieure à une durée avec courant constant appliqué. Dans certains modes de réalisation, la structure de cuivre nanomaclé est déposée par application d'une forme d'onde de courant pulsé suivie d'une forme d'onde de courant constant. Dans certains modes de réalisation, la structure de cuivre nanomaclé est déposée sur une couche de base hautement orientée, une solution de placage électrolytique contenant un additif accélérateur. Dans certains modes de réalisation, la structure de cuivre nanomaclé est déposée sur une couche de germe non-cuivre. Dans certains modes de réalisation, la structure de cuivre nanomaclé est déposée à un débit relativement faible.
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