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1. WO2020092047 - COMPLEMENTARY PATTERN STATION DESIGNS

Publication Number WO/2020/092047
Publication Date 07.05.2020
International Application No. PCT/US2019/057326
International Filing Date 22.10.2019
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
CPC
C23C 16/45536
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
45527characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
45536Use of plasma, radiation or electromagnetic fields
C23C 16/4584
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4584the substrate being rotated
C23C 16/46
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
46characterised by the method used for heating the substrate
H01J 2237/002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
002Cooling arrangements
H01J 2237/20214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
202Movement
20214Rotation
H01J 2237/3321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
332Coating
3321CVD [Chemical Vapor Deposition]
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • AUBUCHON, Joseph
  • BALUJA, Sanjeev
  • RICE, Michael
  • DAN, Arkaprava
  • CHEN, Hanhong
Agents
  • SMIRK, Rebecca A.
Priority Data
16/658,39621.10.2019US
62/751,91329.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) COMPLEMENTARY PATTERN STATION DESIGNS
(FR) CONCEPTIONS DE STATION À MOTIFS COMPLÉMENTAIRES
Abstract
(EN)
Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.
(FR)
La présente invention concerne un appareil et des procédés pour traiter une ou plusieurs tranches. Une première station de traitement a un premier motif d'écoulement de gaz parmi un premier diffuseur de gaz et/ou un premier motif de canal de refroidissement et/ou un premier dispositif de chauffage. Une seconde station de traitement a un second motif d'écoulement de gaz parmi un second diffuseur de gaz et/ou un second motif de canal de refroidissement et/ou un second dispositif de chauffage. Le second diffuseur de gaz, le second motif de canal de refroidissement ou le second dispositif de chauffage est mis en rotation ou translaté par rapport au premier diffuseur de gaz, au premier motif de canal de refroidissement ou au premier dispositif de chauffage pour fournir le second motif d'écoulement de gaz complémentaire du premier motif d'écoulement de gaz.
Also published as
Latest bibliographic data on file with the International Bureau