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1. WO2020091425 - MONOCRYSTALLINE THIN FILM, METHOD FOR MANUFACTURING SAME, AND PRODUCT USING SAME

Publication Number WO/2020/091425
Publication Date 07.05.2020
International Application No. PCT/KR2019/014492
International Filing Date 30.10.2019
IPC
C23C 14/16 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
16on metallic substrates or on substrates of boron or silicon
C23C 14/02 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
02Pretreatment of the material to be coated
C23C 14/24 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
24Vacuum evaporation
C22C 38/10 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
38Ferrous alloys, e.g. steel alloys
10containing cobalt
C30B 30/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
30Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
C21D 6/00 2006.01
CCHEMISTRY; METALLURGY
21METALLURGY OF IRON
DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE BY DECARBURISATION, TEMPERING, OR OTHER TREATMENTS
6Heat treatment of ferrous alloys
Applicants
  • 한국전기연구원 KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE [KR]/[KR]
Inventors
  • 김호섭 KIM, Ho Sup
  • 오상수 OH, Sang Soo
  • 하홍수 HA, Hong Soo
  • 조정현 JO, Jeong Hyeon
  • 김관태 KIM, Gwan Tae
  • 노현우 NOH, Hyun Woo
Agents
  • 특허법인 부경 PUKYUNG INTERNATIONAL PATENT & LAW FIRM
Priority Data
10-2018-013392702.11.2018KR
10-2018-013582907.11.2018KR
10-2019-012764115.10.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) MONOCRYSTALLINE THIN FILM, METHOD FOR MANUFACTURING SAME, AND PRODUCT USING SAME
(FR) FILM MINCE MONOCRISTALLIN, PROCÉDÉ DE FABRICATION DUDIT FILM MINCE MONOCRISTALLIN ET PRODUIT UTILISANT LEDIT FILM MINCE MONOCRISTALLIN
(KO) 단결정성 박막, 이의 제조방법 및 이를 이용한 물품
Abstract
(EN)
The present invention relates to: a monocrystalline thin film having excellent crystal orientation; a method for manufacturing same; and a semiconductor device, a battery device, a superconducting wire, and a superconducting product, each comprising the monocrystalline thin film. The subject matter of the present invention is to provide: a monocrystalline thin film which is formed by depositing a second polycrystalline material on a substrate made of a first polycrystalline material and has, at grain boundaries, the crystal orientation satisfying relationship 1 below; a method for manufacturing same; and a semiconductor device, a battery device, a superconducting wire, and a superconducting product, each comprising the monocrystalline thin film. [Relationship 1] 0° < FWHM2 ≤ 3° (where, FWHM2 denotes the full width at half maximum of a distribution curve of misorientation angles at grain boundaries of the thin film.)
(FR)
La présente invention concerne : un film mince monocristallin possédant une excellente orientation cristalline ; un procédé de fabrication de ce dernier ; et un dispositif semi-conducteur, un dispositif de batterie, un fil supraconducteur et un produit supraconducteur, comprenant chacun le film mince monocristallin. La présente invention a pour objet : un film mince monocristallin qui est formé par dépôt d'un second matériau polycristallin sur un substrat réalisé à partir d'un premier matériau polycristallin et qui possède, au niveau de limites de grain, l'orientation cristalline satisfaisant la relation 1 ci-dessous ; un procédé de fabrication de ce dernier ; et un dispositif à semi-conducteur, un dispositif de batterie, un fil supraconducteur et un produit supraconducteur, comprenant chacun le film mince monocristallin. [Relation 1] 0° < FWHM2 ≤ 3° (où FWHM2 désigne la largeur totale à mi-hauteur d'une courbe de distribution d'angles de mauvaise orientation au niveau de limites de grain du film mince.)
(KO)
본 발명은 결정배향성이 우수한 단결정성 박막과 이의 제조방법, 단결정성 박막을 포함하는 반도체 소자, 전지 소자, 초전도선재 및 초전도 물품에 관한 것이다. 이러한 본 발명은, 다결정의 제1 물질로 형성된 기판의 상부에 다결정의 제2 물질이 증착되어 형성되고, 결정립계에서의 결정배향성이 하기 관계식 1을 만족하는 것을 특징으로 하는 단결정성 박막과 이의 제조방법, 단결정성 박막을 포함하는 반도체 소자, 전지 소자, 초전도선재 및 초전도 물품을 기술적 요지로 한다. [관계식 1] 0°< FWHM2 ≤ 3° (단, FWHM2는 박막 결정립계에서의 결정방위차 각도(misorientation angle) 분포곡선의 반가폭(full width at half maximum)이다.)
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