Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020091165 - PIXEL, DISPLAY DEVICE INCLUDING SAME, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

Publication Number WO/2020/091165
Publication Date 07.05.2020
International Application No. PCT/KR2019/005229
International Filing Date 30.04.2019
IPC
G09G 3/3233 2016.01
GPHYSICS
09EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
22using controlled light sources
30using electroluminescent panels
32semiconductive, e.g. using light-emitting diodes
3208organic, e.g. using organic light-emitting diodes
3225using an active matrix
3233with pixel circuitry controlling the current through the light-emitting element
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 27/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
Applicants
  • 삼성디스플레이 주식회사 SAMSUNG DISPLAY CO., LTD. [KR]/[KR]
Inventors
  • 양태훈 YANG, Tae Hoon
  • 김기범 KIM, Ki Bum
  • 이종찬 LEE, Jong Chan
  • 정웅희 JEONG, Woong Hee
Agents
  • 김두식 KIM, Doo Sik
  • 오종한 OH, Jong Han
  • 문용호 MOON, Yong Ho
Priority Data
10-2018-013353202.11.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) PIXEL, DISPLAY DEVICE INCLUDING SAME, AND METHOD FOR MANUFACTURING DISPLAY DEVICE
(FR) PIXEL, DISPOSITIF D'AFFICHAGE LE COMPRENANT, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF D'AFFICHAGE
(KO) 화소, 이를 포함한 표시 장치, 및 표시 장치의 제조 방법
Abstract
(EN)
A pixel may comprise: a light emitting element; a first transistor connected between a first node and the light emitting element to control the amount of current flowing from a first actuating power source of the first node to the second actuating power source through the light emitting element; a second transistor connected between a data line and the first transistor, and turned on by an i-th (i is a natural number of 2 or larger) scan signal; a third transistor connected between the first transistor and the first node, and turned on by the i-th scan signal; and a fourth transistor connected between the first node and an initialization power supply line to which initialization power is applied, and turned on by an (i-1)-th scan signal. The fourth transistor may be configured to be a tunnel field-effect transistor comprising: a source region and a drain region spaced a predetermined gap from each other and formed in opposite conductivity types; a channel region provided between the source region and the drain region; and a gate electrode provided above the channel region while a gate insulating layer is disposed between the gate electrode and the channel region.
(FR)
L'invention concerne un pixel qui peut comprendre : un élément électroluminescent ; un premier transistor connecté entre un premier nœud et l'élément électroluminescent pour commander l'intensité d'un courant circulant d'une première source de puissance d'actionnement du premier nœud à une seconde source de puissance d'actionnement par l'intermédiaire de l'élément électroluminescent ; un deuxième transistor connecté entre une ligne de données et le premier transistor, et mis à l'état passant par un i-ème (i est un entier naturel supérieur ou égal à 2) signal de balayage ; un troisième transistor connecté entre le premier transistor et le premier nœud, et mis à l'état passant par le i-ième signal de balayage ; et un quatrième transistor connecté entre le premier nœud et une ligne d'alimentation en puissance d'initialisation à laquelle une puissance d'initialisation est appliquée, et mis à l'état passant par un (i - 1)ième signal de balayage. Le quatrième transistor peut être configuré pour être un transistor à effet de champ à effet tunnel comprenant : une zone de source et une zone de drain espacées l'une de l'autre par un espace prédéterminé et formées avec des types de conductivité opposés ; une zone de canal disposée entre la zone de source et la zone de drain ; et une électrode de grille disposée au-dessus de la zone de canal tandis qu'une couche d'isolation de grille est disposée entre l'électrode de grille et la zone de canal.
(KO)
화소는, 발광 소자; 제1 노드와 상기 발광 소자 사이에 접속되어 상기 제1 노드의 제1 구동 전원으로부터 상기 발광 소자를 경유하여 상기 제2 구동 전원으로 흐르는 전류량을 제어하는 제1 트랜지스터; 데이터 선과 상기 제1 트랜지스터 사이에 접속되며, i(i는 2 이상 자연수) 번째 주사 신호에 턴-온되는 제2 트랜지스터; 상기 제1 트랜지스터와 상기 제1 노드 사이에 접속되고, 상기 i번째 주사 신호에 턴-온되는 제3 트랜지스터; 및 초기화 전원이 인가되는 초기화 전원 라인과 상기 제1 노드 사이에 접속되고, i-1번째 주사 신호에 턴-온되는 제4 트랜지스터를 포함할 수 있다. 여기서, 상기 제4 트랜지스터는 일정 간격 이격되어 반대 도전형으로 형성된 소스 영역과 드레인 영역, 상기 소스 영역과 상기 드레인 영역 사이에 제공된 채널 영역, 상기 채널 영역 상에 게이트 절연층을 사이에 두고 제공된 게이트 전극을 포함하는 터널링 전계 효과 트랜지스터로 설정될 수 있다.
Latest bibliographic data on file with the International Bureau