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1. WO2020090950 - CHEMICAL-RESISTANT PROTECTIVE FILM FORMING COMPOSITION WHICH CONTAINS POLYMERIZATION PRODUCT OF ARYLENE COMPOUND HAVING GLYCIDYL GROUP

Publication Number WO/2020/090950
Publication Date 07.05.2020
International Application No. PCT/JP2019/042708
International Filing Date 31.10.2019
IPC
C08G 59/22 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
59Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by reaction of epoxy polycondensates with monofunctional low-molecular-weight compounds; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
20characterised by the epoxy compounds used
22Di-epoxy compounds
C08G 65/28 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
65Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
02from cyclic ethers by opening of the heterocyclic ring
26from cyclic ethers and other compounds
28Cyclic ethers and hydroxy compounds
G03F 7/11 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/26 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 遠藤 貴文 ENDO Takafumi
  • 西田 登喜雄 NISHITA Tokio
  • 水落 龍太 MIZUOCHI Ryuta
Agents
  • 特許業務法人 津国 TSUKUNI & ASSOCIATES
  • 山村 大介 YAMAMURA Daisuke
Priority Data
2018-20686001.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CHEMICAL-RESISTANT PROTECTIVE FILM FORMING COMPOSITION WHICH CONTAINS POLYMERIZATION PRODUCT OF ARYLENE COMPOUND HAVING GLYCIDYL GROUP
(FR) COMPOSITION DE FORMATION DE FILM PROTECTEUR RÉSISTANT AUX PRODUITS CHIMIQUES QUI CONTIENT UN PRODUIT DE POLYMÉRISATION D'UN COMPOSÉ ARYLÈNE AYANT UN GROUPE GLYCIDYLE
(JA) グリシジル基を有するアリーレン化合物との重合生成物を含む薬液耐性保護膜形成組成物
Abstract
(EN)
The present invention provides: a protective film forming composition which is capable of forming a flat film that has good mask (protection) function against a wet etching liquid during processing of a semiconductor substrate, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding; a protective film which is produced using this composition; a substrate with a resist pattern; and a method for producing a semiconductor device. A composition for forming a protective film against a wet etching liquid for semiconductors, which contains a solvent and a ring-opened polymer (C) that is obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). It is preferable that the ring-opened polymer (C) is represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group which is generated by ring-opening polymerization of the diepoxy compound (A); and T represents a divalent organic group which is derived from the bi- or higher functional proton-generating compound (B)).
(FR)
La présente invention concerne : une composition de formation de film protecteur qui est capable de former un film plat qui a une bonne fonction de masque (protection) contre un liquide de gravure humide pendant le traitement d'un substrat semi-conducteur, une vitesse élevée de gravure sèche et une bonne couverture d'un substrat avec une différence de niveau, tout en ayant une faible différence d'épaisseur de film après incorporation ; un film protecteur qui est produit à l'aide de cette composition ; un substrat ayant un motif de réserve ; et un procédé de production d'un dispositif à semi-conducteurs. L'invention concerne également une composition pour former un film protecteur contre un liquide de gravure humide pour semi-conducteurs, qui contient un solvant et un polymère à cycle ouvert (C) qui est obtenu par réaction entre un composé diépoxy (A) et un composé générateur de protons bifonctionnel ou fonctionnel supérieur (B). Il est préférable que le polymère à cycle ouvert (C) soit représenté par une structure unitaire de formule (A-1). (Dans la formule (A-1), Q représente un groupe organique divalent qui est produit par polymérisation par ouverture de cycle du composé diépoxy (A) ; et T représente un groupe organique divalent qui est dérivé du composé générateur de protons bifonctionnel ou fonctionnel supérieur (B)).
(JA)
半導体基板加工時にウェットエッチング液に対する良好なマスク(保護)機能、高ドライエッチング速度を有し、さらに段差基板に対しても被覆性が良好で、埋め込み後の膜厚差が小さく、平坦な膜を形成し得る保護膜形成組成物及び該組成物を用いて製造した保護膜、レジストパターン付き基板及び半導体装置の製造方法を提供すること。ジエポキシ化合物(A)と2官能以上のプロトン発生化合物(B)との反応によって得られる開環重合物(C)と、溶剤とを含む、半導体用ウエットエッチング液に対する保護膜形成組成物。 前記開環重合物(C)が、下記式(A-1)の単位構造で表されることが好ましい。 (式(A-1)中、Qはジエポキシ化合物(A)の開環重合によって生じる2価の有機基を表し、Tは2官能以上のプロトン発生化合物(B)に由来する2価の有機基を表す。)
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