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1. WO2020090613 - POROUS CERAMIC, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SHOWER PLATE, AND PLUG

Publication Number WO/2020/090613
Publication Date 07.05.2020
International Application No. PCT/JP2019/041682
International Filing Date 24.10.2019
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
C04B 35/505 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
50based on rare earth compounds
505based on yttrium oxide
C04B 38/06 2006.01
CCHEMISTRY; METALLURGY
04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
BLIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
38Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
06by burning-out added substances
H05H 1/24 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 松藤 浩正 MATSUFUJI, Hiromasa
Agents
  • 特許業務法人ブナ国際特許事務所 BUNA PATENT ATTORNEYS
Priority Data
2018-20382230.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POROUS CERAMIC, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, SHOWER PLATE, AND PLUG
(FR) CÉRAMIQUE POREUSE, ÉLÉMENT POUR APPAREIL DE FABRICATION DE SEMI-CONDUCTEUR, PLAQUE DE DOUCHE ET FICHE
(JA) 多孔質セラミックス、半導体製造装置用部材、シャワープレートおよびプラグ
Abstract
(EN)
A porous ceramic according to the present disclosure includes yttrium zirconate and yttrium oxide, and employs at least one thereof as a main component. This member for semiconductor manufacturing apparatus, such as a shower plate, plug, or the like, in a semiconductor manufacturing apparatus, is made of said porous ceramic.
(FR)
L'invention concerne une céramique poreuse comprenant du zirconate d'yttrium et de l'oxyde d'yttrium, et utilisant au moins l'un de ceux-ci en tant que composant principal. Cet élément pour appareil de fabrication de semi-conducteur, tel qu'une plaque de douche, une fiche, ou similaire, dans un appareil de fabrication de semi-conducteur, est constitué de ladite céramique poreuse.
(JA)
本開示の多孔質セラミックスは、ジルコン酸イットリウムおよび酸化イットリウムを含み、その少なくともいずれかを主成分とする。半導体製造装置におけるシャワープレートまたはプラグ等の半導体製造装置用部材は、上記多孔質セラミックスからなる。
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