Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020090427 - PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

Publication Number WO/2020/090427
Publication Date 07.05.2020
International Application No. PCT/JP2019/040363
International Filing Date 15.10.2019
IPC
C23C 16/505 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
C23C 16/52 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
52Controlling or regulating the coating process
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 川上 聡 KAWAKAMI, Satoru
  • 光成 正 MITSUNARI, Tadashi
  • 岩下 伸也 IWASHITA, Shinya
  • 鈴木 悠介 SUZUKI, Yusuke
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE
Priority Data
2018-20255629.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
(FR) APPAREIL DE TRAITEMENT PAR PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置およびプラズマ処理方法
Abstract
(EN)
This plasma processing apparatus is provided with a processing vessel, a plurality of first electrodes, a second electrode, an electric power supply source, an allocation setting unit, and a control device. The respective first electrodes are disposed inside the processing vessel and supplied with high-frequency electric power. The second electrode is disposed inside the processing vessel and functions as a counter electrode for the first electrodes. The electric power supply source generates plasma between the first electrodes and the second electrode by supplying high-frequency electric power to the plurality of first electrodes, and processes an article to be processed using the generated plasma. The allocation setting unit is disposed between the electric power supply source and at least one of the first electrodes, and provides settings for allocation of the high-frequency electric power to be supplied to the respective first electrodes from the electric power supply source. Further, the allocation setting unit has a plurality of series circuits in each of which an impedance circuit and a switch element are connected in series. The plurality of series circuits are connected in parallel. The control device performs control on the switch elements in the respective series circuits.
(FR)
L'invention concerne un appareil de traitement par plasma pourvu d'un récipient de traitement, d'une pluralité de premières électrodes, d'une seconde électrode, d'une source d'alimentation électrique, d'une unité de réglage d'attribution et d'un dispositif de commande. Les premières électrodes respectives sont disposées à l'intérieur du récipient de traitement et alimentées en énergie électrique haute fréquence. La seconde électrode est disposée à l'intérieur du récipient de traitement et fonctionne comme une contre-électrode pour les premières électrodes. La source d'alimentation électrique génère un plasma entre les premières électrodes et la seconde électrode en fournissant une énergie électrique haute fréquence à la pluralité de premières électrodes, et traite un article à traiter à l'aide du plasma généré. L'unité de réglage d'attribution est disposée entre la source d'alimentation électrique et au moins une des premières électrodes, et fournit des réglages pour l'attribution de l'énergie électrique haute fréquence devant être fournie aux premières électrodes respectives à partir de la source d'alimentation électrique. En outre, l'unité de réglage d'attribution comporte une pluralité de circuits en série dans chacun desquels un circuit d'impédance et un élément de commutation sont connectés en série. La pluralité de circuits en série sont connectés en parallèle. Le dispositif de commande exécute une commande sur les éléments de commutation dans les circuits en série respectifs.
(JA)
プラズマ処理装置は、処理容器、複数の第1の電極、第2の電極、電力供給源、配分設定部、および制御装置を備える。それぞれの第1の電極は、処理容器内に設けられ、高周波電力が供給される。第2の電極は、処理容器内に設けられ、第1の電極の対向電極として機能する。電力供給源は、複数の第1の電極に高周波電力を供給することにより、第1の電極と第2の電極との間にプラズマを生成し、生成されたプラズマを用いて被処理体を処理する。配分設定部は、電力供給源と少なくとも1つの第1の電極との間に設けられ、電力供給源からそれぞれの第1の電極に供給される高周波電力の配分を設定する。また、配分設定部は、インピーダンス回路とスイッチ素子とが直列に接続された複数の直列回路を有する。複数の直列回路は、並列に接続されている。制御装置は、それぞれの直列回路のスイッチ素子を制御する。
Latest bibliographic data on file with the International Bureau