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1. WO2020090396 - LASER ANNEALING DEVICE AND LASER ANNEALING METHOD

Publication Number WO/2020/090396
Publication Date 07.05.2020
International Application No. PCT/JP2019/039860
International Filing Date 09.10.2019
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/268 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
Applicants
  • 株式会社ブイ・テクノロジー V TECHNOLOGY CO., LTD. [JP]/[JP]
Inventors
  • 水村 通伸 MIZUMURA, Michinobu
Agents
  • 特許業務法人日誠国際特許事務所 NISSAY INTERNATIONAL PATENT OFFICE
Priority Data
2018-20724002.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
(FR) DISPOSITIF DE RECUIT LASER ET PROCÉDÉ DE RECUIT LASER
(JA) レーザアニール装置およびレーザアニール方法
Abstract
(EN)
Provided is a laser annealing device in which a substrate to be processed and a laser irradiation unit are relatively movable in a scanning direction, wherein a film to be processed is formed on the substrate to be processed, and the laser irradiation unit performs an annealing process by irradiating, with a linear beam of laser light, a scheduled processing area set on the film to be processed. The scheduled processing area is set as a band-shaped area extending along the scanning direction, and within the scheduled processing area, the irradiation surface area is set so as to be disposed in a state where the longitudinal direction of the irradiation surface area is inclined with respect to the scanning direction.
(FR)
L'invention concerne un dispositif de recuit laser dans lequel un substrat à traiter et une unité de rayonnement laser sont relativement mobiles dans une direction de balayage, un film à traiter étant formé sur le substrat à traiter, et l'unité de rayonnement laser effectuant un processus de recuit en exposant à un rayonnement, avec un faisceau linéaire de lumière laser, une zone de traitement prévue définie sur le film à traiter. La zone de traitement prévue est définie sous la forme d'une zone en bande s'étendant dans la direction de balayage, et dans la zone de traitement prévue, la surface de rayonnement est définie de manière à se trouver dans un état où la direction longitudinale de la surface de rayonnement est inclinée par rapport à la direction de balayage.
(JA)
被処理膜が表面に形成された被処理基板と、前記被処理膜に設定された処理予定領域に沿ってレーザ光のラインビームを照射してアニール処理を行うレーザ照射部と、が走査方向へ相対的に移動可能なレーザアニール装置であって、前記処理予定領域が前記走査方向に沿って延びる帯状の領域に設定され、前記処理予定領域内に、前記照射面領域が、当該照射面領域の長手方向が前記走査方向に対して傾いた状態で配置されるように設定される。
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