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1. WO2020090164 - VACUUM TREATMENT DEVICE

Publication Number WO/2020/090164
Publication Date 07.05.2020
International Application No. PCT/JP2019/028821
International Filing Date 23.07.2019
IPC
C23C 14/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
H01L 21/203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
Inventors
  • 藤井 佳詞 FUJII Yoshinori
Agents
  • 特許業務法人青莪 SEIGA PATENT AND TRADEMARK CORPORATION
Priority Data
2018-20437730.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VACUUM TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT SOUS VIDE
(JA) 真空処理装置
Abstract
(EN)
The present invention provides a vacuum treatment device which, when vacuum treatment is performed in a vacuum chamber while using a hot plate to control, to a prescribed temperature above room temperature, a substrate to be treated that is placed on a stage, is capable of limiting to the extent possible negative effects from the vacuum treatment such as causing film quality deterioration. A stage 4 has a base 41 and a hot plate 43 installed upon the base and capable of heating a substrate Sw to be treated, and additionally provided are a deposition preventing plate 8 and a metal platen ring 7 surrounding the hot plate with a prescribed gap therebetween. The surface portion of the platen ring facing the hot plate is formed from a low-emissivity layer 73, the emissivity thereof being reduced by applying surface treatment to the parent metal of the platen ring.
(FR)
La présente invention concerne un dispositif de traitement sous vide qui, lorsqu'un traitement sous vide est effectué dans une chambre à vide tandis qu'une une plaque chauffante est utilisée pour contrôler, à une température prescrite supérieure à la température ambiante, un substrat à traiter qui est placé sur un étage, est capable de limiter dans la mesure du possible les éventuels effets négatifs dus au traitement sous vide, telle qu'une détérioration de la qualité du film. Un étage (4) comporte une base (41) et une plaque chauffante (43) installée sur la base et apte à chauffer un substrat (Sw) à traiter. Le dispositif selon l'invention comprend en outre une plaque de prévention de dépôt (8) et une bague de platine métallique (7) entourant la plaque chauffante avec un espace prescrit entre celles-ci. La partie de surface de la bague de platine faisant face à la plaque chauffante est formée à partir d'une couche à faible émissivité (73), son émissivité étant réduite par application d'un traitement de surface au métal de base de la bague de platine.
(JA)
真空チャンバ内で、ホットプレートによりステージに設置された被処理基板を室温より高い所定温度に制御しながら真空処理を施すような場合、例えば膜質の劣化を招来するといった真空処理に対する悪影響を可及的に抑制することができる真空処理装置を提供する。 ステージ4が基台41とこの基台上に設置されて被処理基板Swの加熱を可能とするホットプレート43とを有し、所定の隙間を存してこのホットプレートを囲繞する金属製のプラテンリング7と防着板8とを更に備える。ホットプレートに対向するプラテンリングの表面部分は、その母材金属に表面処理を施すことで放射率を低減させた低放射率層73で構成される。
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