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1. WO2020090163 - VACUUM TREATMENT DEVICE

Publication Number WO/2020/090163
Publication Date 07.05.2020
International Application No. PCT/JP2019/028814
International Filing Date 23.07.2019
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
C23C 14/50 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
50Substrate holders
Applicants
  • 株式会社アルバック ULVAC, INC. [JP]/[JP]
Inventors
  • 藤井 佳詞 FUJII Yoshinori
Agents
  • 特許業務法人青莪 SEIGA PATENT AND TRADEMARK CORPORATION
Priority Data
2018-20443730.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) VACUUM TREATMENT DEVICE
(FR) DISPOSITIF DE TRAITEMENT SOUS VIDE
(JA) 真空処理装置
Abstract
(EN)
The present invention provides a vacuum treatment device in which it is possible to control a substrate to be treated to a prescribed temperature even when heat enters the substrate to be treated from sources other than a hot plate during vacuum treatment. This vacuum treatment device SM is equipped with a vacuum chamber 1 that is capable of forming a vacuum environment, and a stage 4 that supports, inside the vacuum chamber, a substrate Sw to be treated, wherein the stage has a base 41 that is selectively cooled, a chuck plate 42 that is provided above the base and electrostatically attracts the substrate to be treated, and a hot plate 43 that is interposed between the base and the chuck plate, and the substrate to be treated, which is electrostatically attracted to the surface of the chuck plate, can be controlled to a prescribed temperature that is room temperature or higher. The vacuum treatment device further comprises, between the base and the hot plate, a heat insulating plate 44 that inhibits the transfer of heat from the hot plate to the base, and a high-emissivity layer 45 having a higher emissivity than the top surface of the base is provided between the base and the heat insulating plate.
(FR)
La présente invention concerne un dispositif de traitement sous vide dans lequel il est possible de commander un substrat à traiter à une température prescrite même lorsque de la chaleur entre dans le substrat à traiter à partir de sources autres qu'une plaque chauffante pendant un traitement sous vide. Ce dispositif de traitement sous vide SM est équipé d'une chambre sous vide 1 qui est capable de former un environnement sous vide, et d'un étage 4 qui supporte, à l'intérieur de la chambre sous vide, un substrat Sw à traiter, l'étage ayant une base 41 qui est refroidie de façon sélective, une plaque de mandrin 42 qui est disposée au-dessus de la base et attire électrostatiquement le substrat à traiter, et une plaque chauffante 43 qui est interposée entre la base et la plaque de mandrin, et le substrat à traiter, qui est attiré électrostatiquement à la surface de la plaque de mandrin, peut être commandé à une température prescrite qui est à température ambiante ou plus. Le dispositif de traitement sous vide comprend en outre, entre la base et la plaque chauffante, une plaque d'isolation thermique 44 qui empêche le transfert de chaleur de la plaque chauffante à la base, et une couche à haute émissivité 45 ayant une émissivité supérieure à celle de la surface supérieure de la base est disposée entre la base et la plaque d'isolation thermique.
(JA)
真空処理中にホットプレート以外から被処理基板への入熱がある場合でも、被処理基板を所定温度に制御できるようにした真空処理装置を提供する。 真空雰囲気の形成が可能な真空チャンバ1と、真空チャンバ内で被処理基板Swを支持するステージ4とを備え、ステージが、選択的に冷却される基台41と、基台上に設けられて被処理基板を静電吸着するチャックプレート42と、基台とチャックプレートとの間に介設されたホットプレート43とを有し、チャックプレート表面に静電吸着された被処理基板を室温以上の所定温度に制御自在とした本発明の真空処理装置SMは、基台とホットプレートとの間に、ホットプレートから基台への伝熱を抑制する断熱プレート44を更に備え、基台と断熱プレートとの間に、基台の上面よりも高い放射率を持つ高放射率層45を設ける。
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