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1. WO2020089729 - SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

Publication Number WO/2020/089729
Publication Date 07.05.2020
International Application No. PCT/IB2019/058970
International Filing Date 22.10.2019
IPC
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
B81B 3/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
B81B 7/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
7Microstructural systems
02containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems (MEMS)
F21V 7/00 2006.01
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
7Reflectors for light sources
G02B 26/08 2006.01
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
26Optical devices or arrangements using movable or deformable optical elements for controlling the intensity, colour, phase, polarisation or direction of light, e.g. switching, gating or modulating
08for controlling the direction of light
G03B 21/00 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
21Projectors or projection-type viewers; Accessories therefor
Applicants
  • 株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP]/[JP]
Inventors
  • 豊高 耕平 TOYOTAKA, Kouhei
  • 魚地 秀貴 UOCHI, Hideki
Priority Data
2018-20702602.11.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET APPAREIL ÉLECTRONIQUE
(JA) 半導体装置、電子機器
Abstract
(EN)
The present invention provides a semiconductor device and the like which achieve reduced power consumption. A semiconductor device including a static actuator group is provided with an OS transistor and a capacitive element in each static actuator, and increases power supply voltage supplied from outside in each static actuator. The use of the OS transistor makes it possible to maintain the increased voltage for a long period even after the supply of the power supply voltage is stopped. The capacitive element can be made smaller by using the OS transistor.
(FR)
La présente invention concerne un dispositif à semi-conducteur et similaire qui permet d'obtenir une consommation d'énergie réduite. Un dispositif à semi-conducteur comprenant un groupe d'actionneurs statiques est pourvu d'un transistor OS et d'un élément capacitif dans chaque actionneur statique, et accroît la tension d'alimentation amenée depuis l'extérieur dans chaque actionneur statique. L'utilisation du transistor OS permet de maintenir cette tension accrue pendant une longue période même après que la fourniture de la tension d'alimentation se soit arrêtée. L'élément capacitif peut être rendu plus compact grâce à l'utilisation du transistor OS.
(JA)
消費電力が低減された半導体装置などを提供する。静電アクチュエータ群を含む半導体装置において、静電アクチュエータ毎にOSトランジスタと容量素子を設け、静電アクチュエータ毎に外部から供給された電源電圧を昇圧する。OSトランジスタを用いることで、電源電圧の供給が停止した後も昇圧した電圧の長期間保持が可能となる。OSトランジスタを用いることで、容量素子を小さくすることができる。
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