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1. WO2020089229 - OPTICAL SEMICONDUCTOR AMPLIFIER

Publication Number WO/2020/089229
Publication Date 07.05.2020
International Application No. PCT/EP2019/079530
International Filing Date 29.10.2019
IPC
H01S 5/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
12the resonator having a periodic structure, e.g. in distributed feed-back  lasers
H01S 5/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
H01S 5/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02-H01S5/30100
CPC
H01S 5/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
12the resonator having a periodic structure, e.g. in distributed feed-back [DFB] lasers
H01S 5/3412
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers [SQW-lasers], multiple quantum well lasers [MQW-lasers] or graded index separate confinement heterostructure lasers [GRINSCH-lasers]
341Structures having reduced dimensionality, e.g. quantum wires
3412quantum box or quantum dash
H01S 5/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Applicants
  • TECHNISCHE UNIVERSITÄT BERLIN [DE]/[DE]
Inventors
  • GREIF, Ludwig
  • SCHLIWA, Andrei
Agents
  • FISCHER, Uwe
Priority Data
18203957.801.11.2018EP
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTISCHER HALBLEITERVERSTÄRKER
(EN) OPTICAL SEMICONDUCTOR AMPLIFIER
(FR) AMPLIFICATEUR OPTIQUE À SEMI-CONDUCTEURS
Abstract
(DE)
Die Erfindung bezieht sich unter anderem auf einen optischen Halbleiterverstärker (10), bei dem eine Vielzahl an Quantenpunkten (QD) in zumindest einer Quantenpunktschicht (21-24) eines Halbleiterelements (11) des Halbleiterverstärkers (10) angeordnet sind, wobei das Halbleiterelement (11) eine in der Quantenpunktschichtebene liegende Vorzugsrichtung (X) aufweist und elongierte Quantenpunkte (QD) vorhanden sind, die jeweils in der genannten Vorzugsrichtung (X) länger sind als in einer dazu senkrechten und ebenfalls in der Quantenpunktschichtebene liegenden Querrichtung (Y). Erfindungsgemäß ist vorgesehen, dass die Strahlverstärkungsrichtung (SVR) des Halbleiterverstärkers (10), die durch eine fiktive Verbindungslinie (VL) zwischen einem zum Einstrahlen von Eingangsstrahlung (Se) dienenden Eingang (A10) des Halbleiterverstärkers (10) und einem zum Ausgeben der verstärkten Strahlung (Sa) dienenden Ausgang (A10) des Halbleiterverstärkers (10) festgelegt wird, parallel oder zumindest näherungsweise parallel zu der Querrichtung (Y) angeordnet ist.
(EN)
The invention relates, inter alia, to an optical semiconductor amplifier (10), in which a plurality of quantum dots (QD) are arranged in at least one quantum dot layer (21-24) of a semiconductor element (11) of the semiconductor amplifier (10), wherein the semiconductor element (11) has a preferred direction (X) located in the quantum dot layer plane, and elongated quantum dots (QD) are present, each of which is longer in the said preferred direction (X) than in a transverse direction (Y) perpendicular thereto and is likewise located in the quantum dot layer plane. According to the invention, the beam amplification direction (SVR) of the semiconductor amplifier (10), which is defined by a fictitious connecting line (VL) between an input (A10) of the semiconductor amplifier (10) that serves for the irradiation of input radiation (Se), and an output (A10) of the semiconductor amplifier (10) that serves for outputting the amplified radiation (Sa), is arranged parallel, or at least approximately parallel, to the transverse direction (Y).
(FR)
La présente invention concerne, entre autres choses, un amplificateur optique à semi-conducteurs (10) avec lequel une pluralité de points quantiques (QD) sont disposés dans au moins une couche de points quantiques (21 à 24) d’un élément semi-conducteur (11) de l’amplificateur à semi-conducteurs (10). L’élément semi-conducteur (11) comprend une direction préférée (X) située dans le plan de la couche de points quantiques, et des points quantiques allongés (QD) sont présents, lesquels points étant chacun plus longs dans ladite direction préférée (X) que dans une direction transversale (Y) perpendiculaire à ladite direction et située également dans le plan de la couche de points quantiques. Selon l’invention, la direction d’amplification de faisceau (SVR) de l’amplificateur à semi-conducteurs (10), qui est déterminée par une ligne de liaison (VL) fictive entre une entrée (A10), de l’amplificateur à semi-conducteurs (10), servant à rayonner un rayonnement d’entrée (Se) et une sortie (A10), de l’amplificateur à semi-conducteurs (10), servant à délivrer le rayonnement amplifié (Sa), est disposée parallèle ou au moins approximativement parallèle à la direction transversale (Y).
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