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1. WO2020088877 - OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP

Publication Number WO/2020/088877
Publication Date 07.05.2020
International Application No. PCT/EP2019/076768
International Filing Date 02.10.2019
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
CPC
H01L 33/0095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0095Post-treatments of the devices, e.g. annealing, recrystallisation, short-circuit elimination
H01L 33/145
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
145with a current-blocking structure
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/387
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
387with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • TÅNGRING, Ivar
  • PERZLMAIER, Korbinian
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2018 127 201.431.10.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERCHIPS
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
(FR) PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION D'UNE PUCE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE
Abstract
(DE)
Es wird ein optoelektronischer Halbleiterchip (20) angegeben mit: - einem x-dotierten Bereich (21), - einem y-dotierten Bereich (22), - einem aktiven Bereich (23), welcher zwischen dem x-dotierten Bereich (21) und dem y-dotierten Bereich (22) angeordnet ist, und - einem x-Kontaktbereich (24), wobei - der x-Kontaktbereich (24) an der dem aktiven Bereich (23) abgewandten Seite des x-dotierten Bereichs (21) angeordnet ist, - der x-Kontaktbereich (24) mindestens einen ersten Bereich (25) und mindestens einen zweiten Bereich (26) aufweist, und - der x-Kontaktbereich (24) dazu ausgelegt ist, dass im Betrieb des optoelektronischen Halbleiterchips (20) mehr Ladungsträger über den zweiten Bereich (26) als über den ersten Bereich (25) in den x-dotierten Bereich (21) injiziert werden. Außerdem wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterchips (20) angegeben.
(EN)
The invention relates to an optoelectronic semiconductor chip (20) comprising: an x-doped region (21), a y-doped region (22), an active region (23) which is arranged between the x-doped region (21) and the y-doped region (22), and an x-contact area (24). The x-contact area (24) is arranged on the side of the x-doped region (21) facing away from the active region (23), the x-contact area (24) comprises at least one first region (25) and at least one second region (26), and the x-contact region (24) is designed such that when the optoelectronic semiconductor chip (20) is in operation, several charge carriers are injected into the x-doped region (21) via the second region (26) aswell as via the first region (25). The invention also relates to a method for producing an optoelectronic semiconductor chip (20).
(FR)
L'invention concerne une puce semi-conductrice (20) optoélectronique comprenant : - une zone dopée x (21), - une zone dopée y (22), - une zone active (23), qui est située entre la zone dopée x (21) et la zone dopée y (22), et une zone de contact x (24), - la zone de contact x (24) étant située sur le côté de la zone dopée x (21) qui est opposé à la zone active (23), - la zone de contact x (24) présentant au moins une première zone (25) et au moins une deuxième zone (26), et - la zone de contact x (24) étant conçue de telle sorte que, lors du fonctionnement de la puce semi-conductrice (20) optoélectronique, davantage de porteurs de charge sont injectés par l'intermédiaire de la deuxième zone (26) que par l'intermédiaire de la première zone (25) dans la zone dopée x (21). L'invention concerne également un procédé de fabrication d'une puce semi-conductrice (20) optoélectronique.
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Latest bibliographic data on file with the International Bureau