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1. WO2020088591 - LDMOS DEVICE AND METHOD FOR PROLONGING SERVICE LIFE OF HOT CARRIER INJECTION EFFECT THEREOF

Publication Number WO/2020/088591
Publication Date 07.05.2020
International Application No. PCT/CN2019/114700
International Filing Date 31.10.2019
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
Applicants
  • 无锡华润上华科技有限公司 CSMC TECHNOLOGIES FAB2 CO., LTD. [CN]/[CN]
Inventors
  • 金宏峰 JIN, Hongfeng
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201811283776.331.10.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LDMOS DEVICE AND METHOD FOR PROLONGING SERVICE LIFE OF HOT CARRIER INJECTION EFFECT THEREOF
(FR) DISPOSITIF LDMOS ET PROCÉDÉ DESTINÉ À PROLONGER LA LONGÉVITÉ DE SON EFFET D’INJECTION DE PORTEURS DE CHARGES À CHAUD
(ZH) LDMOS器件及提升其热载流子注入效应寿命的方法
Abstract
(EN)
An LDMOS device and a method for prolonging the service life of hot carrier injection effect thereof. The method comprises: providing a substrate, a drain-doped region of the LDMOS device being formed in the substrate, at least one side of the drain-doped region parallel to a length direction of a conductive channel forming a shallow trench isolation structure, and the doped type of the drain-doped region being a first conduction type; and performing doping of impurity ions of a second conduction type, a flow blocking region being formed in at least one junction of the drain-doped region and the shallow trench isolation structure.
(FR)
L’invention concerne un dispositif LDMOS et un procédé destiné à prolonger la longévité de son effet d’injection de porteurs de charges à chaud. Le procédé consiste : à produire un substrat, une zone dopée de drain du dispositif LDMOS étant formée dans le substrat, au moins un côté de la zone dopée de drain parallèle à une direction longitudinale d’un canal conducteur formant une structure d’isolation en tranchée peu profonde, et le type dopé de la zone dopée de drain étant un premier type de conduction ; et à procéder au dopage d’ions d’impuretés d’un deuxième type de conduction, une zone de blocage de flux étant formée dans au moins une jonction de la zone dopée de drain et de la structure d’isolation en tranchée peu profonde.
(ZH)
一种提升LDMOS器件的热载流子注入效应寿命的方法,所述方法包括:提供衬底,所述衬底中形成有LDMOS器件的漏极掺杂区,所述漏极掺杂区平行于导电沟道的长度方向的至少一侧形成有浅沟槽隔离结构,所述漏极掺杂区的掺杂类型为第一导电类型;进行第二导电类型杂质离子的掺杂,在所述漏极掺杂区与浅沟槽隔离结构至少一个交界处形成阻流区。
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