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1. WO2020088233 - SILICON CARBIDE SINGLE-CRYSTAL GROWTH DEVICE WITHOUT BONDING SEED CRYSTALS

Publication Number WO/2020/088233
Publication Date 07.05.2020
International Application No. PCT/CN2019/111084
International Filing Date 14.10.2019
IPC
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C30B 23/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
CPC
C30B 23/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • 福建北电新材料科技有限公司 FUJIAN NORSTEL MATERIAL TECHNOLOGIES CO., LTD [CN]/[CN]
Inventors
  • 陈泽斌 CHEN, Zebin
  • 张洁 ZHANG, Jie
  • 廖弘基 LIAO, Hongji
  • 陈华荣 CHEN, Huarong
Agents
  • 北京超凡宏宇专利代理事务所(特殊普通合伙) CHOFN INTELLECTUAL PROPERTY
Priority Data
201811282839.331.10.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SILICON CARBIDE SINGLE-CRYSTAL GROWTH DEVICE WITHOUT BONDING SEED CRYSTALS
(FR) DISPOSITIF DE CROISSANCE DE MONOCRISTAL DE CARBURE DE SILICIUM SANS LIAISON DE GERMES CRISTALLINS
(ZH) 无需粘结籽晶的碳化硅单晶生长装置
Abstract
(EN)
A silicon carbide single-crystal growth device without bonding seed crystals, comprising a seed crystal box and a crucible. The crucible is internally provided with a shelf layer. The seed crystal box is placed on the shelf layer and has a cylindrical shape. A lid having a circular structure is provided at the top of the seed crystal box. Small arch-shaped holes are uniformly distributed in the sidewall of the seed crystal box. Large circular holes are formed in the bottom of the seed crystal box. The bottom of the seed crystal box is connected to a skirt band. The silicon carbide single-crystal growth device without bonding seed crystals can be applied to crystal growth of 4 inches, 6 inches or even larger sizes, greatly reduces the planar hexagonal defects in the crystals, and obtains high-quality silicon carbide single crystals. The silicon carbide single-crystal growth device can reduce the risk of physical injury and crystal damage caused by improper operation during crystal removal.
(FR)
L'invention concerne un dispositif de croissance de monocristal de carbure de silicium sans liaison de germes cristallins, comprenant une boîte de germes cristallins et un creuset. Le creuset est doté à l'intérieur d'une couche de rayon. La boîte de germes cristallins est placée sur la couche de rayon et a une forme cylindrique. Un couvercle ayant une structure circulaire est placé au dessus de la boîte de germes cristallins. De petits trous en forme d'arc sont répartis uniformément dans la paroi latérale de la boîte de germes cristallins. De grands trous circulaires sont formés au fond de la boîte de germes cristallins. Le fond de la boîte de germes cristallins est relié à une bande de jupe. Le dispositif de croissance de monocristal de carbure de silicium sans liaison de germes cristallins peut être appliqué à une croissance cristalline de 4 pouces, 6 pouces ou même de plus grandes dimensions, réduit considérablement les défauts hexagonaux planaires dans les cristaux, et permet d'obtenir des monocristaux de carbure de silicium de haute qualité. Le dispositif de croissance de monocristal de carbure de silicium peut réduire le risque de lésion physique et d'endommagement de cristal provoqués par une opération incorrecte pendant le retrait des cristaux.
(ZH)
无需粘结籽晶的碳化硅单晶生长装置,包括籽晶盒和坩埚;坩埚内部设置有架层;架层用于放置籽晶盒;籽晶盒采用圆柱形状;籽晶盒的顶部设有环形结构的盖子;籽晶盒侧壁上设有均匀排布的拱门形的小孔;籽晶盒底部设有大圆孔;籽晶盒底部连接有裙带。所述无需粘结籽晶的碳化硅单晶生长装置能应用于4寸和6寸,甚者更大尺寸的晶体生长,大幅度降低晶体中的平面六角缺陷,得到了高质量的碳化硅单晶晶体;可以减少在取拿晶体过程中,人员身体受伤和因操作不当而导致晶体受损的风险。
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