Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020087669 - METHOD FOR PREPARING THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR

Publication Number WO/2020/087669
Publication Date 07.05.2020
International Application No. PCT/CN2018/120413
International Filing Date 11.12.2018
IPC
H01L 21/3205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
H01L 29/786 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
CPC
H01L 29/66969
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66969of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
H01L 29/7869
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
786Thin film transistors, ; i.e. transistors with a channel being at least partly a thin film
7869having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Applicants
  • 深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 胡小波 HU, Xiaobo
Agents
  • 深圳翼盛智成知识产权事务所(普通合伙) ESSEN PATENT & TRADEMARK AGENCY
Priority Data
201811271819.629.10.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR
(FR) PROCÉDÉ DE PRÉPARATION D'UN TRANSISTOR EN COUCHES MINCES, ET TRANSISTOR EN COUCHES MINCES
(ZH) 一种薄膜晶体管制备方法及薄膜晶体管
Abstract
(EN)
Disclosed are a method for preparing a thin-film transistor and a thin-film transistor. The method comprises: forming a gate layer, a gate insulating layer and an IGZO layer on a glass substrate; depositing a Ti film, source and drain electrode layers on the IGZO layer and forming a photoresist pattern, and etching the periphery of the source and drain electrode layers; removing the photoresist of a channel, and etching an MoAlMo film layer within the channel; and removing the remaining photoresist, and manufacturing a passivation layer and a pixel electrode layer. The device properties of the thin-film transistor are improved in an embodiment of the present invention.
(FR)
L'invention concerne un procédé de préparation d'un transistor en couches minces, et un transistor en couches minces. Le procédé comprend les étapes consistant : à former une couche de grille, une couche d'isolation de grille et une couche d'IGZO sur un substrat en verre ; à déposer un film de Ti, des couches d'électrodes source et drain sur la couche d'IGZO et former un motif de résine photosensible puis à graver la périphérie des couches d'électrodes source et drain ; à éliminer la résine photosensible d'un canal et graver une couche de film de MoAlMo dans le canal ; et à éliminer la résine photosensible restante et fabriquer une couche de passivation et une couche d'électrode pixel. Les propriétés de dispositif du transistor en couches minces sont améliorées dans un mode de réalisation de la présente invention.
(ZH)
本发明实施例公开了一种薄膜晶体管制备方法及薄膜晶体管。该方法包括:在玻璃基板上形成栅极层、栅极绝缘层和IGZO层;在IGZO层上沉积Ti膜、源漏电极层并形成光刻胶图案,刻蚀源漏电极层外围;去掉沟道的光刻胶,刻蚀沟道内MoAlMo膜层;去掉剩余光刻胶,进行钝化层、像素电极层的制作。本发明实施例中提高了薄膜晶体管的器件特性。
Also published as
Latest bibliographic data on file with the International Bureau