Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020087581 - THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MEASURING CHANNEL RESISTANCE AND CONTACT RESISTANCE

Publication Number WO/2020/087581
Publication Date 07.05.2020
International Application No. PCT/CN2018/116007
International Filing Date 16.11.2018
IPC
G01R 31/26 2014.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
CPC
G01R 27/08
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
08Measuring resistance by measuring both voltage and current
G01R 27/205
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
27Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
20Measuring earth resistance; Measuring contact resistance, ; e.g.; of earth connections, e.g. plates
205Measuring contact resistance of connections, e.g. of earth connections
H01L 22/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
10Measuring as part of the manufacturing process
14for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
H01L 22/34
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
22Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Applicants
  • 深圳市华星光电半导体显示技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 朱茂霞 ZHU, Maoxia
Agents
  • 深圳市德力知识产权代理事务所 COMIPS INTELLECTUAL PROPERTY OFFICE
Priority Data
201811290149.231.10.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM TRANSISTOR STRUCTURE AND METHOD FOR MEASURING CHANNEL RESISTANCE AND CONTACT RESISTANCE
(FR) STRUCTURE DE TRANSISTOR À COUCHES MINCES ET PROCÉDÉ DE MESURE DE RÉSISTANCE DE CANAL ET DE RÉSISTANCE DE CONTACT
(ZH) 薄膜晶体管结构及沟道电阻和接触电阻的测量方法
Abstract
(EN)
A thin film transistor structure and a method for measuring a channel resistance and a contact resistance. The thin film transistor structure comprises a substrate (1), a gate (2) provided on the substrate (1), a gate insulating layer (3) provided on the gate (2), an active layer (4) provided on the gate insulating layer (3), and a source (5), a measuring electrode (6), and a drain (7) successively arranged on the active layer (4) at intervals; and the interval distance between the measuring electrode (6) and the source (5) is different from the interval distance between the measuring electrode (6) and the drain (7). By providing the measuring electrode (6) on the active layer (4), and then by measuring the voltage on the measuring electrode (6) and the current flowing through the drain (7), the channel resistance (R1) and the contact resistance (R2) of the thin film transistor are determined, and thus the measurement of the channel resistance (R1) and the contact resistance (R2) of the thin film transistor can be completed rapidly and accurately by means of one single thin film transistor.
(FR)
L'invention concerne une structure de transistor à couches minces et un procédé de mesure d'une résistance de canal et d'une résistance de contact. La structure de transistor à couches minces comprend un substrat (1), une grille (2) disposée sur le substrat (1), une couche d'isolation de grille (3) disposée sur la grille (2), une couche active (4) disposée sur la couche d'isolation de grille (3), et une source (5), une électrode de mesure (6) et un drain (7) disposés successivement sur la couche active (4) à des intervalles ; et la distance d'intervalle entre l'électrode de mesure (6) et la source (5) est différente de la distance d'intervalle entre l'électrode de mesure (6) et le drain (7). En plaçant l'électrode de mesure (6) sur la couche active (4), puis en mesurant la tension sur l'électrode de mesure (6) et le courant circulant à travers le drain (7), la résistance de canal (R1) et la résistance de contact (R2) du transistor à couches minces sont déterminées, et ainsi la mesure de la résistance de canal (R1) et de la résistance de contact (R2) du transistor à couches minces peut être réalisée rapidement et avec précision au moyen d'un seul transistor à couches minces.
(ZH)
一种薄膜晶体管结构及沟道电阻和接触电阻的测量方法。所述薄膜晶体管结构包括:衬底基板(1)、设于所述衬底基板(1)上的栅极(2)、设于所述栅极(2)上的栅极绝缘层(3)、设于所述栅极绝缘层(3)上的有源层(4)以及设于所述有源层(4)上的依次间隔排列的源极(5)、测量电极(6)和漏极(7);所述测量电极(6)与所述源极(5)之间的间隔距离不同于所述测量电极(6)与所述漏极(7)之间的间隔距离,在有源层(4)上设置测量电极(6),进而通过测量所述测量电极(6)上的电压和流过漏极(7)的电流,确定所述薄膜晶体管的沟道电阻(R1)和接触电阻(R2),能够通过单颗薄膜晶体管,快速准确完成薄膜晶体管的沟道电阻(R1)和接触电阻(R2)的测量。
Also published as
Latest bibliographic data on file with the International Bureau