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1. WO2020073028 - DUAL BAND PHOTODETECTION SYSTEM AND METHOD

Publication Number WO/2020/073028
Publication Date 09.04.2020
International Application No. PCT/US2019/054900
International Filing Date 04.10.2019
IPC
H01L 31/101 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/1465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
1465of the hybrid type
H01L 27/14652
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
14652Multispectral infra-red imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
H01L 31/1013
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
1013devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
Applicants
  • FLIR COMMERCIAL SYSTEMS, INC. [US]/[US]
Inventors
  • HUANG, Edward K.
Agents
  • MICHELSON, Gregory J.
Priority Data
62/742,22505.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DUAL BAND PHOTODETECTION SYSTEM AND METHOD
(FR) SYSTÈME ET PROCÉDÉ DE PHOTODÉTECTION DOUBLE BANDE
Abstract
(EN)
Techniques are disclosed for facilitating dual color detection. In one example, an imaging device includes a first pixel configured to detect first image data associated with a first waveband of electromagnetic radiation. The imaging device further includes a second pixel configured to detect second image data associated with a second waveband of the electromagnetic radiation, where at least a portion of the second waveband does not overlap the first waveband. The imaging device further includes a bias circuit configured to apply a first voltage between the first pixel and a first ground contact, and apply a second voltage between the second pixel and a second ground contact. The first voltage is different from the second voltage. Related methods are also provided.
(FR)
L'invention concerne des techniques permettant de faciliter la détection de couleurs doubles. Dans un exemple, un dispositif d'imagerie comprend un premier pixel configuré pour détecter des premières données d'image associées à une première bande d'onde de rayonnement électromagnétique. Le dispositif d'imagerie comprend en outre un second pixel configuré pour détecter des secondes données d'image associées à une seconde bande d'onde du rayonnement électromagnétique, au moins une partie de la seconde bande d'onde ne chevauchant pas la première bande d'onde. Le dispositif d'imagerie comprend en outre un circuit de polarisation configuré pour appliquer une première tension entre le premier pixel et un premier contact de masse, et appliquer une seconde tension entre le second pixel et un second contact de masse. La première tension est différente de la seconde tension. L’invention concerne en outre des procédés associés.
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