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1. WO2020072482 - METHOD, APPARATUS AND SYSTEM FOR WAFER DECHUCKING USING DYNAMIC VOLTAGE SWEEPING

Publication Number WO/2020/072482
Publication Date 09.04.2020
International Application No. PCT/US2019/054049
International Filing Date 01.10.2019
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H02N 13/00 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
13Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
B23Q 3/15 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
QDETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL, CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
3Devices holding, supporting, or positioning, work or tools, of a kind normally removable from the machine
15Devices for holding work using magnetic or electric force acting directly on the work
CPC
H01J 2237/24564
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
245Detection characterised by the variable being measured
24564Measurements of electric or magnetic variables, e.g. voltage, current, frequency
H01J 2237/3341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
32Processing objects by plasma generation
33characterised by the type of processing
334Etching
3341Reactive etching
H01J 37/32697
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32697Electrostatic control
H01J 37/32715
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32431Constructional details of the reactor
32715Workpiece holder
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
H01L 21/67253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
67253Process monitoring, e.g. flow or thickness monitoring
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • WANG, Haitao
  • CHAFIN, Michael, G.
  • RAMASWAMY, Kartik
  • GUO, Yue
  • TODOROW, Valentin
  • DOAN, Kenny
  • SHOJI, Sergio, F.
  • MAYS, Brad, L.
  • DADU, Usama
Agents
  • VILLABON, Jorge, Tony
  • TABOADA, Alan
  • LINARDAKIS, Leonard, P.
  • MOSER, JR., Raymond, R.
Priority Data
16/153,65005.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD, APPARATUS AND SYSTEM FOR WAFER DECHUCKING USING DYNAMIC VOLTAGE SWEEPING
(FR) PROCÉDÉ, APPAREIL ET SYSTÈME DE DESSERRAGE DE TRANCHE À L'AIDE D'UN BALAYAGE DE TENSION DYNAMIQUE
Abstract
(EN)
A method, apparatus and system for dechucking a processing object from a surface of an electrostatic chuck (ESC) in a processing chamber can include applying to the ESC for a first time interval, a first dechuck voltage having a substantially equal magnitude and opposite polarity of a chuck voltage chucking the processing object to the surface of the ESC, selecting a second dechuck voltage having an opposite polarity as the first dechuck voltage, linearly sweeping the ESC voltage from the first dechuck voltage to the second dechuck voltage over a second time interval, monitoring the ESC current during the second time interval until a current spike in the ESC current above a threshold is detected, communicating a command to move support pins up to remove the processing object from the ESC surface, and maintaining the second dechuck voltage until the processing object is separated from the surface of the ESC.
(FR)
L’invention concerne un procédé, un appareil et un système pour desserrer un objet de traitement d'une surface d'un mandrin électrostatique (ESC) dans une chambre de traitement pouvant comprendre l'application à l'ESC pendant un premier intervalle de temps, d’une première tension de desserrage ayant une amplitude sensiblement égale et une polarité opposée d'une tension de mandrin serrant l'objet de traitement sur la surface de l'ESC, la sélection d’une seconde tension de desserrage ayant une polarité opposée à celle de la première tension de desserrage, le balayage linéaire de la tension d'ESC de la première tension de desserrage à la seconde tension de desserrage sur un second intervalle de temps, la surveillance du courant d'ESC pendant le second intervalle de temps jusqu'à ce qu'un pic de courant dans le courant d'ESC au-dessus d'un seuil soit détecté, la communication d'une commande pour déplacer des goupilles de soutien vers le haut pour retirer l'objet de traitement de la surface de l'ESC, et le maintien de la seconde tension de desserrage jusqu'à ce que l'objet de traitement soit séparé de la surface de l'ESC.
Also published as
Latest bibliographic data on file with the International Bureau