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1. WO2020071688 - METHOD FOR MANUFACTURING THIN-FILM-TYPE ULTRASONIC FINGERPRINT SENSOR AND SENSOR MANUFACTURED THEREBY

Publication Number WO/2020/071688
Publication Date 09.04.2020
International Application No. PCT/KR2019/012571
International Filing Date 27.09.2019
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 41/083 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
083having a stacked or multilayer structure
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 41/083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
083having a stacked or multilayer structure
Applicants
  • (주)비티비엘 BTBL CO., LTD [KR]/[KR]
Inventors
  • 김영규 KIM, Young Kyu
  • 박경옥 PARK, Kyung Ok
  • 이승진 LEE, Seung Jin
Agents
  • 지정훈 JI, Jeong Hun
Priority Data
10-2018-011863205.10.2018KR
10-2019-008184208.07.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING THIN-FILM-TYPE ULTRASONIC FINGERPRINT SENSOR AND SENSOR MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION DE CAPTEUR D'EMPREINTES DIGITALES ULTRASONIQUES DE TYPE FILM MINCE ET CAPTEUR AINSI FABRIQUÉ
(KO) 박막형 초음파 지문센서의 제조방법 및 그 센서
Abstract
(EN)
The present invention provides a method for manufacturing a thin-film-type ultrasonic fingerprint sensor and a sensor manufactured thereby. The present invention provides a method for manufacturing a thin-film-type ultrasonic fingerprint sensor and a sensor manufactured thereby, the method comprising the steps of: (S1) forming an auxiliary substrate on a lamination substrate; (S2) forming an electrode pattern layer on the auxiliary substrate; (S3) laminating a piezoelectric film on the electrode pattern layer; (S4) laminating a mask layer on the piezoelectric film and patterning the piezoelectric film; and (S5) bonding the piezoelectric film to an ultrasonic electrode pattern film and (S5) separating the auxiliary substrate and the electrode pattern layer from each other. Therefore, an ultrasonic sensor can be made of a thin film and thus can be compactly applied to an electronic device for fingerprint recognition security. In particular, the ultrasonic sensor can be flexible and thus can be applied to a flexible substrate.
(FR)
La présente invention concerne un procédé de fabrication d'un capteur d'empreintes ultrasoniques de type film mince et un capteur ainsi fabriqué. La présente invention concerne un procédé de fabrication d'un capteur d'empreintes digitales à ultrasons de type à film mince et un capteur ainsi fabriqué, le procédé comprenant les étapes consistant à : (S1) former un substrat auxiliaire sur un substrat de stratification ; (S2) former une couche de motif d'électrode sur le substrat auxiliaire ; (S3) stratifier un film piézoélectrique sur la couche de motif d'électrode ; (S4) stratifier une couche de masque sur le film piézoélectrique et former en motif le film piézoélectrique ; et (S5) lier le film piézoélectrique à un film de motif d'électrode ultrasonore et (S5) séparer le substrat auxiliaire et la couche de motif d'électrode l'un de l'autre. Par conséquent, un capteur ultrasonore peut être constitué d'un film mince et peut ainsi être appliqué de manière compacte à un dispositif électronique pour la sécurité de reconnaissance d'empreintes digitales. En particulier, le capteur ultrasonore peut être flexible et peut ainsi être appliqué à un substrat souple.
(KO)
본 발명은 박막형 초음파 지문센서의 제조방법 및 그 센서를 개시한다. 본 발명에 따르는 박막형 초음파 지문센서의 제조방법 및 그 센서는 적층기판에 보조기판을 형성하는 단계(S1)와, 상기 보조기판의 상부로 전극패턴층을 구비하는 단계(S2)와, 상기 전극패턴층의 상부로 압전막을 적층하는 단계(S3)와, 상기 압전막의 상부로 마스크층을 적층하여 압전막을 패터닝하는 단계(S4)와, 상기 압전막을 초음파전극패턴막과 본딩하는 단계(S5) 및 상기 보조기판과 전극패턴층을 분리하는 단계(S5)를 포함하는데, 이에 의할 때, 초음파센서를 박막으로 제조하여 컴팩트하게 지문인식 보안을 위한 전자기기에 채용할 수 있으며, 특히 유연성을 가질 수 있어 플렉서블 기판에 적용할 수 있다.
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