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1. WO2020071638 - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2020/071638
Publication Date 09.04.2020
International Application No. PCT/KR2019/010846
International Filing Date 26.08.2019
IPC
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
Applicants
  • (주)알엔알랩 RNR LAB INC. [KR]/[KR]
Inventors
  • 류정도 RYU, Jeong Do
Agents
  • 김권석 KIM, Kwonseok
Priority Data
10-2018-011831104.10.2018KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(KO) 반도체 디바이스 제조 방법
Abstract
(EN)
A method for manufacturing a semiconductor device comprises the steps of: providing a substrate; forming an insulating layer on the substrate; forming an opening exposing the substrate by etching the insulating layer; forming a contact plug on the opening and the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser beam.
(FR)
Un procédé de fabrication d'un dispositif à semi-conducteur comprend les étapes consistant à : fournir un substrat; former une couche isolante sur le substrat; former une ouverture exposant le substrat par gravure de la couche isolante; former une fiche de contact sur l'ouverture et la couche isolante; former une couche métallique sur la fiche de contact; et irradier la couche métallique avec un faisceau laser.
(KO)
반도체 디바이스 제조 방법은 기판을 제공하는 단계, 상기 기판 상에 절연층을 형성하는 단계, 상기 절연층을 식각하여 상기 기판을 노출시키는 개구부를 형성하는 단계, 상기 개구부 및 상기 절연층 상에 콘택 플러그를 형성하는 단계, 상기 콘택 플러그 상에 메탈층을 형성하는 단계 및 상기 메탈층에 레이저를 조사하는 단계를 포함한다.
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