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1. WO2020071458 - LASER PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND EXAMINATION DEVICE

Publication Number WO/2020/071458
Publication Date 09.04.2020
International Application No. PCT/JP2019/039013
International Filing Date 02.10.2019
IPC
H01L 21/301 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
B23K 26/00 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 2014.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B24B 7/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
B24B 49/12 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
12involving optical means
CPC
B23K 26/00
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
B23K 26/53
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
50Working by transmitting the laser beam through or within the workpiece
53for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B24B 49/12
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
49Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
12involving optical means
B24B 7/00
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
Applicants
  • 浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP]/[JP]
Inventors
  • 坂本 剛志 SAKAMOTO Takeshi
  • 鈴木 康孝 SUZUKI Yasutaka
  • 佐野 いく SANO Iku
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
  • 黒木 義樹 KUROKI Yoshiki
  • 柴山 健一 SHIBAYAMA Kenichi
Priority Data
2018-18930704.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) LASER PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND EXAMINATION DEVICE
(FR) PROCÉDÉ DE TRAITEMENT LASER, PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, ET DISPOSITIF D'EXAMEN
(JA) レーザ加工方法、半導体デバイス製造方法及び検査装置
Abstract
(EN)
An examination device is provided with: a stage which supports a wafer in which a plurality of columns of modification region are formed in a semiconductor substrate; a light source which outputs light transmitted through the semiconductor substrate; an objective lens which allows passage of light that has propagated through the semiconductor substrate; a light detection unit which detects light that has passed through the objective lens; and an examination unit which determines whether, in an examination region between a first modification region closest to an upper surface of the semiconductor substrate and a second modification region closest to the first modification region, a tip-end of a crack extending from the first modification region toward the back-surface side of the semiconductor substrate exists. The objective lens places a focal point in the examination region from the back-surface side. The light detection unit detects light propagating in the semiconductor substrate from the upper-surface side to the back-surface side thereof.
(FR)
La présente invention concerne un dispositif d'examen pourvu : d'une platine qui supporte une tranche dans laquelle une pluralité de colonnes de région de modification sont formées dans un substrat semi-conducteur ; d'une source de lumière qui émet de la lumière transmise à travers le substrat semi-conducteur ; d'une lentille d'objectif qui permet le passage de la lumière qui s'est propagée à travers le substrat semi-conducteur ; d'une unité de détection de lumière qui détecte la lumière qui a traversé la lentille d'objectif ; et d'une unité d'examen qui détermine si, dans une région d'examen entre une première région de modification la plus proche d'une surface supérieure du substrat semi-conducteur et une seconde région de modification la plus proche de la première région de modification, une extrémité de pointe d'une fissure s'étendant à partir de la première région de modification vers le côté surface arrière du substrat semi-conducteur existe. La lentille d'objectif place un point focal dans la région d'examen à partir du côté surface arrière. L'unité de détection de lumière détecte la lumière se propageant dans le substrat semi-conducteur depuis le côté surface supérieure jusqu'au côté surface arrière de celui-ci.
(JA)
検査装置は、半導体基板の内部に複数列の改質領域が形成されたウェハを支持するステージと、半導体基板に対して透過性を有する光を出力する光源と、半導体基板を伝搬した光を通過させる対物レンズと、対物レンズを通過した光を検出する光検出部と、半導体基板の表面に最も近い第1改質領域と第1改質領域に最も近い第2改質領域との間の検査領域に、第1改質領域から半導体基板の裏面側に延びる亀裂の先端が存在するか否かを検査する検査部と、を備える。対物レンズは、検査領域内に裏面側から焦点を合わせる。光検出部は、表面側から裏面側に半導体基板を伝搬する光を検出する。
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Latest bibliographic data on file with the International Bureau