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1. WO2020071339 - METHOD FOR PRODUCING SUBSTRATE, COMPOSITION, AND POLYMER

Publication Number WO/2020/071339
Publication Date 09.04.2020
International Application No. PCT/JP2019/038636
International Filing Date 30.09.2019
IPC
C23C 18/18 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, i.e. electroless plating
18Pretreatment of the material to be coated
B32B 15/08 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products essentially comprising metal
04comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
08of synthetic resin
C08F 8/00 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
C08L 101/02 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101Compositions of unspecified macromolecular compounds
02characterised by the presence of specified groups
H01L 21/288 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
288from a liquid, e.g. electrolytic deposition
CPC
B32B 15/08
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
15Layered products comprising ; a layer of; metal
04comprising metal as the main or only constituent of a layer, ; which is next to another layer of the same or of a different material
08of synthetic resin
C08F 8/00
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
8Chemical modification by after-treatment
C08L 101/02
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
101Compositions of unspecified macromolecular compounds
02characterised by the presence of specified groups ; , e.g. terminal or pendant functional groups
C23C 18/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, e.g. electroless plating
18Pretreatment of the material to be coated
H01L 21/288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • 小松 裕之 KOMATSU Hiroyuki
  • 玉田 美樹 TAMADA Miki
  • 久米川 涼 KUMEGAWA Ryo
  • 酒井 達也 SAKAI Tatsuya
Agents
  • 天野 一規 AMANO Kazunori
Priority Data
2018-18864003.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SUBSTRATE, COMPOSITION, AND POLYMER
(FR) PROCÉDÉ DE PRODUCTION D'UN SUBSTRAT, COMPOSITION ET POLYMÈRE
(JA) 基板の製造方法、組成物及び重合体
Abstract
(EN)
The purpose of the present invention is to provide: a method for producing a substrate, by which a substrate having a metal-containing layer on a surface of a metal substrate can be produced simply; a composition; and a polymer. This method for producing a substrate includes a step for coating a composition on a metal substrate and a step for forming a metal-containing layer on at least a part of the coating film formed in the coating step. The method is characterized in that the composition contains a solvent and a polymer having a first terminal structure and a second terminal structure in the same molecule, and each of the first terminal structure and the second terminal structure is selected from the group consisting of a structure represented by formula (1) and a structure represented by formula (2). In formula (1), A1 is a monovalent group containing a functional group able to chemically bond to a metal atom. In formula (2), L2 is -S-, -NR- or -NA22-. A2 and A22 are monovalent groups containing a functional group able to chemically bond to a metal atom.
(FR)
Le but de la présente invention est de fournir : un procédé de production d'un substrat, permettant de produire simplement un substrat ayant une couche contenant un métal sur une surface d'un substrat métallique ; une composition ; et un polymère. Le présent procédé de production de substrat comprend une étape consistant à revêtir une composition sur un substrat métallique et une étape consistant à former une couche contenant un métal sur au moins une partie du film de revêtement formé lors de l'étape de revêtement. Le procédé est caractérisé en ce que la composition contient un solvant et un polymère ayant une première structure terminale et une seconde structure terminale dans la même molécule, et chacune de la première structure terminale et de la seconde structure terminale est choisie dans le groupe constitué par une structure représentée par la formule (1) et une structure représentée par la formule (2). Dans la formule (1), A1 est un groupe monovalent contenant un groupe fonctionnel apte à se lier chimiquement à un atome métallique. Dans la formule (2), L2 est -S-, -NR- ou -NA22-. A2 et A22 sont des groupes monovalents contenant un groupe fonctionnel apte à se lier chimiquement à un atome métallique.
(JA)
金属基板の表面に金属含有層を有する基板を簡便に製造することができる基板の製造方法、組成物及び重合体の提供を目的とする。 本発明は、金属基板上に組成物を塗工する工程と、上記塗工工程により形成された塗工膜上の少なくとも一部に金属含有層を形成する工程とを備える基板の製造方法であって、上記組成物が溶媒と同一分子上に第1末端構造及び第2末端構造を有する重合体とを含有し、上記第1末端構造及び第2末端構造がそれぞれ下記式(1)で表される構造及び下記式(2)で表される構造からなる群より選ばれる少なくとも1種であることを特徴とする。下記式(1)中、Aは、金属原子と化学結合可能な官能基を含む1価の基である。下記式(2)中、Lは、-S-、-NR-又は-NA22-である。A及びA22は、金属原子と化学結合可能な官能基を含む1価の基である。
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