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1. WO2020071223 - PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF

Publication Number WO/2020/071223
Publication Date 09.04.2020
International Application No. PCT/JP2019/037781
International Filing Date 26.09.2019
IPC
H01L 51/46 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46Selection of materials
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/42 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44Details of devices
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 27/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
30with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/42
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
H01L 51/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation ; using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
44Details of devices
Applicants
  • 住友化学株式会社 SUMITOMO CHEMICAL COMPANY, LIMITED [JP]/[JP]
Inventors
  • フェララ ジョバンニ FERRARA, Giovanni
  • 西 美樹 NISHI, Miki
Agents
  • 中山 亨 NAKAYAMA, Tohru
  • 坂元 徹 SAKAMOTO, Toru
Priority Data
2018-18693801.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF
(FR) ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE ET SON PROCÉDÉ DE FABRICATION
(JA) 光電変換素子及びその製造方法
Abstract
(EN)
The present invention reduces the dark current ratio. This photoelectric conversion element 10 includes: an anode 16; a cathode 12; an active layer 14 provided between the anode and the cathode; and at least one layer of an electron transport layer 13 provided between the active layer and the cathode. The electron transport layer includes an insulating material and a semiconductor material, and the difference between the work function of the electron transport layer and the work function of the cathode is 0.88 eV or greater. With the photoelectric conversion element, furthermore, the active layer includes a p-type semiconductor material and an n-type semiconductor material, and a work function (Wf1) of the electron transport layer and a LUMO energy level (LUMO) of the n-type semiconductor material satisfy formula (2). | LUMO | – Wf1 ≥ 0.06 eV (2)
(FR)
La présente invention réduit le rapport de courant d'obscurité. Cet élément de conversion photoélectrique 10 comprend : une anode 16; une cathode 12; une couche active 14 disposée entre l'anode et la cathode; et au moins une couche d'une couche de transport d'électrons 13 disposée entre la couche active et la cathode. La couche de transport d'électrons comprend un matériau isolant et un matériau semi-conducteur, et la différence entre la fonction de travail de la couche de transport d'électrons et la fonction de travail de la cathode est supérieure ou égale à 0,88 eV. Avec l'élément de conversion photoélectrique, en outre, la couche active comprend un matériau semi-conducteur de type p et un matériau semi-conducteur de type n, et une fonction de travail (Wf1) de la couche de transport d'électrons et un niveau d'énergie LUMO (LUMO) du matériau semi-conducteur de type n satisfont la formule (2). | LUMO | – Wf1 ≥ 0,06 eV (2)
(JA)
暗電流比を低減する。 光電変換素子10は、陽極16と、陰極12と、該陽極及び陰極間に設けられている活性層14と、活性層及び陰極間に設けられている少なくとも1層の電子輸送層13とを含み、電子輸送層が、絶縁性材料と、半導体材料とを含み、電子輸送層の仕事関数と陰極の仕事関数との差が、0.88eV以上である。 さらに、前記活性層がp型半導体材料及びn型半導体材料を含み、 前記電子輸送層の仕事関数(Wf1)と前記n型半導体材料のLUMOのエネルギーレベル(LUMO)とが下記式(2)を満たす光電変換素子。 |LUMO|-Wf1≧0.06eV (2)
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