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1. WO2020071212 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

Publication Number WO/2020/071212
Publication Date 09.04.2020
International Application No. PCT/JP2019/037615
International Filing Date 25.09.2019
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B05C 11/08 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
CAPPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
11Component parts, details or accessories not specifically provided for in groups B05C1/-B05C9/132
02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface; Control of the thickness of a coating
08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
B05C 11/08
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
CAPPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
11Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; ; Controlling means therefor
08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 猶原 英司 NAOHARA Hideji
  • 沖田 有史 OKITA Yuji
  • 角間 央章 KAKUMA Hiroaki
  • 増井 達哉 MASUI Tatsuya
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi
  • 有田 貴弘 ARITA Takahiro
Priority Data
2018-18998405.10.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
(FR) PROCÉDÉ DE TRAITEMENT DE SUBSTRAT ET DISPOSITIF DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理方法および基板処理装置
Abstract
(EN)
Provided is a substrate processing method which makes it possible to visually monitor the location which is hit by a liquid column of processing fluid which is discharged onto the end section of a substrate. The substrate processing method is equipped with a holding step, a rotation step, a raising step, a bevel treatment step, an imaging step and a monitoring step. The holding step involves holding the substrate using a substrate-holding part. The rotation step involves rotating the substrate by rotating the substrate-holding part. The raising step involves raising a cup member which surrounds the outer circumference of the substrate-holding part, and positioning the upper end of the cup member at an upper end position which is higher than the upper surface of the substrate. The bevel treatment step discharges a treatment fluid onto the end section of the upper surface of the substrate from the discharge port of the nozzle, which is positioned lower than the upper end position. The imaging step involves obtaining a captured image, by imaging with a camera, of an imaging region which is seen from an imaging position above the substrate and includes the processing fluid discharged from the nozzle and a mirror image of the discharge fluid reflected on the upper surface of the substrate. The monitoring step involves visually monitoring the location which is hit by the treatment fluid on the basis of the mirror image and the treatment fluid in the captured image.
(FR)
La présente invention concerne un procédé de traitement de substrat qui permet de surveiller visuellement l'emplacement qui est frappé par une colonne de liquide de fluide de traitement qui est déversée sur la section d'extrémité d'un substrat. Le procédé de traitement de substrat comprend une étape de maintien, une étape de rotation, une étape d'élévation, une étape de traitement de biseau, une étape d'imagerie et une étape de surveillance. L'étape de maintien consiste à maintenir le substrat à l'aide d'une partie de maintien de substrat. L'étape de rotation consiste à faire tourner le substrat par rotation de la partie de maintien de substrat. L'étape d'élévation comprend l'élévation d'un élément de coupelle qui entoure la circonférence externe de la partie de maintien de substrat, et le positionnement de l'extrémité supérieure de l'élément de coupelle à une position d'extrémité supérieure qui est supérieure à la surface supérieure du substrat. L'étape de traitement de biseau déverse un fluide de traitement sur la section d'extrémité de la surface supérieure du substrat à partir de l'orifice de déversement de la buse, qui est positionné plus bas que la position d'extrémité supérieure. L'étape d'imagerie consiste à obtenir une image capturée, par imagerie avec une caméra, d'une région d'imagerie qui est vue depuis une position d'imagerie au-dessus du substrat et comprend le fluide de traitement déversé à partir de la buse et une image miroir du fluide de déversement réfléchie sur la surface supérieure du substrat. L'étape de surveillance consiste à surveiller visuellement l'emplacement qui est frappé par le fluide de traitement sur la base de l'image miroir et du fluide de traitement dans l'image capturée.
(JA)
基板の端部に吐出された液柱状の処理液の着液位置を監視できる基板処理方法を提供する。基板処理方法は保持工程と回転工程と上昇工程とベベル処理工程と撮像工程と監視工程とを備える。保持工程にて、基板保持部に基板を保持させる。回転工程にて、基板保持部を回転させて基板を回転させる。上昇工程にて、基板保持部の外周を囲むカップ部材を上昇させて、カップ部材の上端を、基板の上面よりも高い上端位置に位置させる。ベベル処理工程にて、当該上端位置よりも低い位置にあるノズルの吐出口から基板の上面の端部に処理液を吐出する。撮像工程にて、ノズルから吐出された処理液と、基板の上面に写る吐出液である鏡像とを含む撮像領域であって、基板の上方の撮像位置から見た撮像領域を、カメラに撮像させて撮像画像を取得する。監視工程にて、撮像画像における処理液と当該鏡像とに基づいて、処理液の着液位置を監視する。
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