Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020070831 - FIELD-EFFECT TRANSISTOR

Publication Number WO/2020/070831
Publication Date 09.04.2020
International Application No. PCT/JP2018/037059
International Filing Date 03.10.2018
IPC
H01L 29/41 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
CPC
H01L 29/41
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP]/[JP]
Inventors
  • 渡辺 伸介 WATANABE, Shinsuke
Agents
  • 高田 守 TAKADA, Mamoru
  • 高橋 英樹 TAKAHASHI, Hideki
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) FIELD-EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP
(JA) 電界効果トランジスタ
Abstract
(EN)
A semiconductor substrate (1, 2) has formed on the surface thereof a gate electrode (3), a source electrode (4), and a drain electrode (5). An insulating film (6) covers the surface of the semiconductor substrate (1, 2) in the area between the gate electrode (3) and the drain electrode (5). A source field plate (7) is formed on the insulating film (6) and is not connected to the drain electrode (5). The cathode of a diode (8) is connected to the source field plate (7), while the anode thereof is held at a constant potential.
(FR)
L'invention concerne un substrat semi-conducteur (1, 2) qui présente sur sa surface une électrode de grille (3), une électrode de source (4) et une électrode de drain (5). Un film isolant (6) recouvre la surface du substrat semi-conducteur (1, 2) dans la zone entre l'électrode de grille (3) et l'électrode de drain (5). Une plaque de champ source (7) est formée sur le film isolant (6) et n'est pas connectée à l'électrode de drain (5). La cathode d'une diode (8) est connectée à la plaque de champ source (7), tandis que son anode est maintenue à un potentiel constant.
(JA)
半導体基板(1,2)の表面にゲート電極(3)、ソース電極(4)及びドレイン電極(5)が形成されている。絶縁膜(6)がゲート電極(3)とドレイン電極(5)との間の領域において半導体基板(1,2)の表面を覆っている。ソースフィールドプレート(7)が絶縁膜(6)の上に形成され、ドレイン電極(5)には接続されていない。ダイオード(8)のカソードがソースフィールドプレート(7)と接続され、アノードが定電位である。
Latest bibliographic data on file with the International Bureau