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1. WO2020070588 - TUNABLE DUAL AND MULTIPLE WAVELENGTH LASER SYSTEM

Publication Number WO/2020/070588
Publication Date 09.04.2020
International Application No. PCT/IB2019/058140
International Filing Date 25.09.2019
IPC
H01S 5/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
H01S 5/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
14External cavity lasers
G02F 1/35 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
35Non-linear optics
H01S 5/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
H01S 5/028 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings
H01S 5/323 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- hetero-structures
323in AIIIBV compounds, e.g. AlGaAs-laser
CPC
G02F 1/353
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
35Non-linear optics
353Frequency conversion, i.e. wherein a light beam with frequency components different from those of the incident light beams is generated
G02F 2/002
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
002using optical mixing
G02F 2203/13
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
2203Function characteristic
13involving THZ radiation
H01S 5/0092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
005Optical devices external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
0092Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
H01S 5/0287
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings ; ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
0287Facet reflectivity
H01S 5/1039
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
1039Details on the cavity length
Applicants
  • KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA]/[SA]
  • KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS [SA]/[SA]
Inventors
  • KHAN, Mohammed Zahed Mustafa
  • SHAMIM, Md Hosne Mobarok
  • NG, Tien Khee
  • OOI, Boon S.
Priority Data
62/740,00902.10.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TUNABLE DUAL AND MULTIPLE WAVELENGTH LASER SYSTEM
(FR) SYSTÈME LASER ACCORDABLE À DEUX OU PLUSIEURS LONGUEURS D'ONDE
Abstract
(EN)
A tunable laser system includes a laser diode producing a light beam having a plurality of frequencies in a visible portion of a light spectrum. A collimating lens arranged in front of the laser diode produces a collimated light beam from the light beam produced by the laser diode. A partial reflector arranged in a path of the collimated laser beam reflects a first portion of the collimated light beam and passes a second portion of the collimated light beam as an output light beam. The first portion of the collimated light beam enters the laser diode and mixes with the plurality of frequencies of the light beam produced by the laser diode so that the laser diode produces a self-injection-locked light beam including at least two frequencies having a frequency difference in a terahertz frequency range. A translational stage adjusts a distance between the laser diode and the partial reflector. The laser diode or the partial reflector is mounted on the translational stage. The at least two frequencies of the self-injection-locked light beam are based on the distance between the laser diode and the partial reflector.
(FR)
La présente invention concerne un système laser accordable comprenant une diode laser produisant un faisceau lumineux ayant une pluralité de fréquences dans une partie visible d'un spectre lumineux. Une lentille de collimation disposée devant la diode laser produit un faisceau lumineux collimaté à partir du faisceau lumineux produit par la diode laser. Un réflecteur partiel disposé dans un trajet du faisceau laser collimaté réfléchit une première partie du faisceau lumineux collimaté et laisse passer une seconde partie du faisceau lumineux collimaté en tant que faisceau lumineux de sortie. La première partie du faisceau lumineux collimaté entre dans la diode laser et se mélange avec la pluralité de fréquences du faisceau lumineux produit par la diode laser de telle sorte que la diode laser produise un faisceau lumineux auto-verrouillé par injection comprenant au moins deux fréquences ayant une différence de fréquence dans une plage de fréquences térahertz. Un étage de translation ajuste une distance entre la diode laser et le réflecteur partiel. La diode laser ou le réflecteur partiel sont montés sur l'étage de translation. Lesdites deux fréquences du faisceau lumineux auto-verrouillé par injection sont basées sur la distance entre la diode laser et le réflecteur partiel.
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