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1. WO2020070022 - COMPONENT HAVING AN ENLARGED ACTIVE ZONE, AND PRODUCTION METHOD

Publication Number WO/2020/070022
Publication Date 09.04.2020
International Application No. PCT/EP2019/076277
International Filing Date 27.09.2019
IPC
H01L 33/38 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/40 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
H01L 33/42 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
42Transparent materials
CPC
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 33/38
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
H01L 33/382
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
382the electrode extending partially in or entirely through the semiconductor body
H01L 33/387
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
38with a particular shape
387with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
H01L 33/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
H01L 33/405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
405Reflective materials
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE]
Inventors
  • HÖPPEL, Lutz
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2018 124 341.302.10.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) BAUELEMENT MIT VERGRÖßERTER AKTIVER ZONE UND VERFAHREN ZUR HERSTELLUNG
(EN) COMPONENT HAVING AN ENLARGED ACTIVE ZONE, AND PRODUCTION METHOD
(FR) COMPOSANT PRÉSENTANT UNE ZONE ACTIVE AGRANDIE ET PROCÉDÉ DE FABRICATION
Abstract
(DE)
Es wird ein Bauelement (10) mit einem Halbleiterkörper (2), einer ersten Elektrode (3) und einer zweiten Elektrode (4) angegeben, wobei der Halbleiterkörper eine erste Halbleiterschicht (21), eine zweite Halbleiterschicht (22) und eine dazwischenliegende aktive Zone (23) aufweist. Die erste Elektrode ist zur elektrischen Kontaktierung der ersten Halbleiterschicht eingerichtet und weist einen ersten Verteilungssteg (30) zur gleichmäßigen Stromverteilung in der ersten Halbleiterschicht auf. Die zweite Elektrode ist zur elektrischen Kontaktierung der zweiten Halbleiterschicht eingerichtet und weist einen zweiten Verteilungssteg (40) zur gleichmäßigen Stromverteilung in der zweiten Halbleiterschicht auf. Der erste Verteilungssteg und der zweite Verteilungssteg sind bereichsweise übereinander auf derselben Seite des Halbleiterkörpers angeordnet, wobei sie in Draufsicht bereichsweise überlappen und den Halbleiterkörper nur stellenweise bedecken. Außerdem erstreckt sich der erste Verteilungssteg stellenweise durch die zweite Halbleiterschicht und die aktive Zone hindurch zur ersten Halbleiterschicht, wobei die aktive Zone in Überlappungsbereichen des Halbleiterkörpers mit dem ersten Verteilungssteg nur stellenweise entfernt ist.
(EN)
The invention relates to a component (10) having a semiconductor body (2), a first electrode (3), and a second electrode (4), wherein the semiconductor body has a first semiconductor layer (21), a second semiconductor layer (22), and an active zone (23) located there-between. The first electrode is configured to electrically contact the first semiconductor layer and has a first distribution web (30) for uniform current distribution in the first semiconductor layer. The second electrode is configured to electrically contact the second semiconductor layer and has a second distribution web (40) for uniform current distribution in the second semiconductor layer. In some regions, the first distribution web and the second distribution web are arranged one above the other on the same side of the semiconductor body, wherein the first distribution web and the second distribution, when viewed from above, overlap in some regions and cover the semiconductor body only in places. In addition, the first distribution web extends in places through the second semiconductor layer and the active zone to the first semiconductor layer, wherein in overlapping regions of the semiconductor body with the first distribution web, the active zone is removed only in some places.
(FR)
L’invention concerne un composant (10) comportant un corps semi-conducteur (2), une première électrode (3) et une seconde électrode (4), le corps semi-conducteur présentant une première couche semi-conductrice (21), une seconde couche semi-conductrice (22), et une zone active (23) placée entre lesdites couches. La première électrode est conçue pour la mise en contact électrique de la première couche semi-conductrice et présente un premier pont de répartition (30) servant à la répartition uniforme du courant dans la première couche semi-conductrice. La seconde électrode est conçue pour la mise en contact électrique de la seconde couche semi-conductrice et présente un second pont de répartition (40) servant à la répartition uniforme du courant dans la seconde couche semi-conductrice. Le premier pont de répartition et le second pont de répartition sont agencés au moins par endroits l’un sur l’autre sur la même face du corps semi-conducteur, de sorte qu’ils se chevauchent par endroits vue d’en haut et ne couvrent le corps semi-conducteur que localement. En outre, le premier pont de répartition traverse localement la seconde couche semi-conductrice et la zone active en direction de la première couche semi-conductrice, la zone active n’étant éloignée du premier pont de répartition que localement dans les zones de chevauchement du corps semi-conducteur.
Also published as
Latest bibliographic data on file with the International Bureau