Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020068697 - TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) DEVICES

Publication Number WO/2020/068697
Publication Date 02.04.2020
International Application No. PCT/US2019/052484
International Filing Date 23.09.2019
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
H01L 29/762 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
762Charge transfer devices
H01L 29/423 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
423not carrying the current to be rectified, amplified or switched
H01L 29/40 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
CPC
H01L 21/0465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0455Making n or p doped regions or layers, e.g. using diffusion
046using ion implantation
0465using masks
H01L 29/0865
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
0843Source or drain regions of field-effect devices
0847of field-effect transistors with insulated gate
0852of DMOS transistors
0856Source regions
0865Disposition
H01L 29/1095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1095Body region, i.e. base region, of DMOS transistors or IGBTs
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/66734
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
66712Vertical DMOS transistors, i.e. VDMOS transistors
66734with a step of recessing the gate electrode, e.g. to form a trench gate electrode
H01L 29/7813
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
7813with trench gate electrode, e.g. UMOS transistors
Applicants
  • GENERAL ELECTRIC COMPANY [US]/[US]
Inventors
  • ARTHUR, Stephen Daley
  • BOLOTNIKOV, Alexander Viktorovich
  • GHANDI, Reza
  • LILIENFELD, David Alan
  • LOSEE, Peter Almern
Agents
  • RARIDEN, John M.
  • SWANSON, Tait R.
  • MANWARE, Robert A.
  • FLETCHER, Michael G.
  • YODER, Patrick S.
  • POWELL, W. Allen
  • BAKKER, Jila
  • SINCLAIR, JR., Steven J.
  • OSTERHAUS, Matthew G.
  • DOOLEY, Matthew C.
  • KANTOR, Andrew L.
  • HENWOOD, Matthew C.
  • WIMMER, Lance G.
  • THOMAS, Jim
Priority Data
16/147,21628.09.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TECHNIQUES FOR FABRICATING CHARGE BALANCED (CB) TRENCH-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) DEVICES
(FR) TECHNIQUES DE FABRICATION DE DISPOSITIFS DE TRANSISTOR À EFFET DE CHAMP MÉTAL-OXYDE MÉTALLIQUE (MOSFET) À TRANCHÉES À CHARGE ÉQUILIBRÉE (CB)
Abstract
(EN)
A charge balanced (CB) trench-metal -oxide- semi conductor field-effect transistor (MOSFET) device may include a charge balanced (CB) layer defined within a first epitaxial (epi) layer that has a first conductivity type. The CB layer may include charge balanced (CB) regions that has a second conductivity type. The CB trench-MOSFET device may include a device layer defined in a second epi layer and having the first conductivity type, where the device layer is disposed on the CB layer. The device layer may include a source region, a base region, a trench feature, and a shield region having the second conductivity type disposed at a bottom surface of the trench feature. The device layer may also include a charge balanced (CB) bus region having the second conductivity type that extends between and electrically couples the CB regions of the CB layer to at least one region of the device layer having the second conductivity type.
(FR)
Selon la présente invention, un dispositif de transistor à effet de champ métal-oxyde semiconducteur (MOSFET) à tranchées à charge équilibrée (CB) peut comprendre une couche à charge équilibrée (CB) définie à l'intérieur d'une première couche épitaxiale (épitaxiale) qui a un premier type de conductivité. La couche CB peut comprendre des régions à charge équilibrée (CB) qui ont un second type de conductivité. Le dispositif MOSFET à tranchées CB peut comprendre une couche de dispositif définie dans une seconde couche épitaxiale et ayant le premier type de conductivité, la couche de dispositif étant disposée sur la couche CB. La couche de dispositif peut comprendre une région de source, une région de base, une caractéristique de tranchée, et une région de blindage ayant le second type de conductivité disposée au niveau d'une surface inférieure de la caractéristique de tranchée. La couche de dispositif peut également comprendre une région de bus à charge équilibrée (CB) ayant le second type de conductivité qui s'étend entre et couple électriquement les régions CB de la couche CB à au moins une région de la couche de dispositif ayant le second type de conductivité.
Also published as
Latest bibliographic data on file with the International Bureau