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1. WO2020068323 - APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS

Publication Number WO/2020/068323
Publication Date 02.04.2020
International Application No. PCT/US2019/047774
International Filing Date 22.08.2019
IPC
G06N 3/063 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
063using electronic means
H01L 27/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
G11C 11/409 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write circuits
H01L 27/11502 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11502with ferroelectric memory capacitors
G06N 3/04 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
04Architecture, e.g. interconnection topology
G06F 17/16 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
17Digital computing or data processing equipment or methods, specially adapted for specific functions
10Complex mathematical operations
16Matrix or vector computation
CPC
G06F 17/16
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
FELECTRIC DIGITAL DATA PROCESSING
17Digital computing or data processing equipment or methods, specially adapted for specific functions
10Complex mathematical operations
16Matrix or vector computation ; , e.g. matrix-matrix or matrix-vector multiplication, matrix factorization
G06N 3/04
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
04Architectures, e.g. interconnection topology
G06N 3/0481
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
04Architectures, e.g. interconnection topology
0481Non-linear activation functions, e.g. sigmoids, thresholds
G06N 3/0635
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
NCOMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
3Computer systems based on biological models
02using neural network models
06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
063using electronic means
0635using analogue means
G11C 11/221
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
22using ferroelectric elements
221using ferroelectric capacitors
G11C 11/409
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write [R-W] circuits 
Applicants
  • INTEL CORPORATION [US]/[US]
Inventors
  • SHARMA, Abhishek
  • KAVALIEROS, Jack T.
  • YOUNG, Ian A.
  • KRISHNAMURTHY, Ram
  • MANIPATRUNI, Sasikanth
  • AVCI, Uygar
  • CHEN, Gregory K.
  • MATHURIYA, Amrita
  • KUMAR, Raghavan
  • KNAG, Phil
  • SUMBUL, Huseyin Ekin
  • HARATIPOUR, Nazila
  • LE, Van H.
Agents
  • O'ROURKE, Robert B.
  • ANDERSON, Vincent A.
  • HODGE, Julia
  • ALDOUS, Alan
Priority Data
16/147,17628.09.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS
(FR) APPLICATIONS DE CONDENSATEURS DE FOND DE LIGNE (BEOL) DANS DES CIRCUITS DE CALCUL-DANS-MÉMOIRE (CIM)
Abstract
(EN)
An apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The memory array includes an embedded dynamic random access memory (eDRAM) memory array. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit. The CIM circuit includes a mathematical computation circuit having a switched capacitor circuit. The switched capacitor circuit includes a back-end-of-line (BEOL) capacitor coupled to a thin film transistor within the metal/dielectric layers of the semiconductor chip. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit. The CIM circuit includes a mathematical computation circuit having an accumulation circuit. The accumulation circuit includes a ferroelectric BEOL capacitor to store a value to be accumulated with other values stored by other ferroelectric BEOL capacitors.
(FR)
Un dispositif est décrit. L'appareil comprend un circuit de calcul-dans-mémoire (CIM). Le circuit CIM comprend un circuit de calcul mathématique couplé à un réseau de mémoire. Le réseau de mémoire comprend un réseau de mémoire à mémoire vive dynamique intégrée (eDRAM). Un autre appareil est décrit. L'appareil comprend un circuit de calcul-dans-mémoire (CIM). Le circuit CIM comprend un circuit de calcul mathématique ayant un circuit de condensateur commuté. Le circuit de condensateur commuté comprend un condensateur de fond de ligne (BEOL) couplé à un transistor à couches minces dans les couches métalliques/diélectriques de la puce de semi-conducteur. Un autre appareil est décrit. L'appareil comprend un circuit de calcul-dans-mémoire (CIM). Le circuit CIM comprend un circuit de calcul mathématique ayant un circuit d'accumulation. Le circuit d'accumulation comprend un condensateur BEOL ferroélectrique pour stocker une valeur à accumuler avec d'autres valeurs stockées par d'autres condensateurs BEOL ferroélectriques.
Also published as
Latest bibliographic data on file with the International Bureau