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1. WO2020068200 - UNUSUAL HIGH THERMAL CONDUCTIVITY IN BORON ARSENIDE BULK CRYSTALS

Publication Number WO/2020/068200
Publication Date 02.04.2020
International Application No. PCT/US2019/038141
International Filing Date 20.06.2019
IPC
C22C 1/007
C30B 29/40 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds
C30B 23/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 5/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
5Single-crystal growth from gels
CPC
C01G 28/00
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
28Compounds of arsenic
Applicants
  • UNIVERSITY OF HOUSTON SYSTEM [US]/[US]
Inventors
  • REN, Zhifeng
  • TIAN, Fei
  • CHEN, Gang
  • SONG, Bai
  • CHEN, Ke
  • SHI, Li
  • CHEN, Xi
  • SULLIVAN, Sean
  • BROIDO, David
  • RAVICHANDRAN, Navaneetha Krishnan
Agents
  • MAAG, Gregory L.
Priority Data
62/687,66220.06.2018US
62/717,72210.08.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) UNUSUAL HIGH THERMAL CONDUCTIVITY IN BORON ARSENIDE BULK CRYSTALS
(FR) CONDUCTIVITÉ THERMIQUE ÉLEVÉE INHABITUELLE DANS DES CRISTAUX MASSIFS D'ARSÉNIURE DE BORE
Abstract
(EN)
A method for growing bulk boron arsenide (BA) crystals, the method comprising utilizing a seeded chemical vapor transport (CVT) growth mechanism to produce single BAs crystals which are used for further CVT growth, wherein a sparsity of nucleation centers is controlled during the further CVT growth. Also disclosed are bulk BAs crystals produced via the method.
(FR)
L'invention concerne un procédé pour faire croître des cristaux massifs d'arséniure de bore (BA), le procédé consistant à utiliser un mécanisme de croissance de transport chimique en phase vapeur (CVT) ensemencé pour produire des monocristaux de BA qui sont utilisés pour une croissance supplémentaire de CVT, une rareté de centres de nucléation étant commandée pendant la croissance supplémentaire de CVT. L'invention concerne également des cristaux massifs de BA produits par l'intermédiaire du procédé.
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