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1. WO2020068186 - THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE INCLUDING WAVY WORD LINES AND METHOD OF MAKING THE SAME

Publication Number WO/2020/068186
Publication Date 02.04.2020
International Application No. PCT/US2019/034791
International Filing Date 31.05.2019
IPC
H01L 27/11582 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11573 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11573characterised by the peripheral circuit region
H01L 27/1157 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
1157with cell select transistors, e.g. NAND
H01L 27/11565 2017.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11565characterised by the top-view layout
H01L 29/792 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
792with charge trapping gate insulator, e.g. MNOS-memory transistor
CPC
H01L 27/11519
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11519characterised by the top-view layout
H01L 27/11524
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11521characterised by the memory core region
11524with cell select transistors, e.g. NAND
H01L 27/11556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
11553with source and drain on different levels, e.g. with sloping channels
11556the channels comprising vertical portions, e.g. U-shaped channels
H01L 27/11565
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11565characterised by the top-view layout
H01L 27/1157
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11568characterised by the memory core region
1157with cell select transistors, e.g. NAND
H01L 27/11582
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11563with charge-trapping gate insulators, e.g. MNOS or NROM
11578characterised by three-dimensional arrangements, e.g. with cells on different height levels
1158with source and drain on different levels, e.g. with sloping channels
11582the channels comprising vertical portions, e.g. U-shaped channels
Applicants
  • SANDISK TECHNOLOGIES LLC [US]/[US]
Inventors
  • KANEKO, Ryosuke
Agents
  • RADOMSKY, Leon
  • COHN, Joanna
  • CONNOR, David
  • GAYOSO, Tony
  • GILL, Matthew
  • GUNNELS, Zarema
  • HANSEN, Robert
  • HUANG, Stephen
  • HYAMS, David
  • JOHNSON, Timothy
  • MAZAHERY, Benjamin
  • MURPHY, Timothy
  • NORRIS, Christine
  • O'BRIEN, Michelle
  • PARK, Byeongju
  • RUTT, Steven
  • SULSKY, Martin
Priority Data
16/142,44726.09.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE INCLUDING WAVY WORD LINES AND METHOD OF MAKING THE SAME
(FR) DISPOSITIF DE MÉMOIRE NON-ET PLAT TRIDIMENSIONNEL COMPRENANT DES LIGNES DE MOT ONDULÉES ET SON PROCÉDÉ DE FABRICATION
Abstract
(EN)
A three-dimensional memory device includes alternating stacks of insulating strips and electrically conductive strips located over a substrate, generally extending along a first horizontal direction, and laterally spaced apart from each other along a second horizontal direction by width-modulated line trenches, memory films located on a respective sidewall of the alternating stacks, generally extending along the first horizontal direction, and laterally undulating along the second horizontal direction, and a plurality of discrete vertical semiconductor channels located on a sidewall of a respective one of the memory films.
(FR)
La présente invention concerne un dispositif de mémoire tridimensionnel comprenant des empilements alternés de bandes isolantes et de bandes électriquement conductrices situées sur un substrat, s'étendant généralement le long d'une première direction horizontale, et espacées latéralement les unes des autres le long d'une seconde direction horizontale par des tranchées de ligne à largeur modulée, des films de mémoire situés sur une paroi latérale respective des empilements alternés, s'étendant généralement le long de la première direction horizontale, et ondulant latéralement le long de la seconde direction horizontale, et une pluralité de canaux semi-conducteurs verticaux discrets situés sur une paroi latérale d'un des films de mémoire respectifs.
Also published as
Latest bibliographic data on file with the International Bureau