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1. WO2020067299 - MODULE AND PRODUCTION METHOD THEREFOR

Publication Number WO/2020/067299
Publication Date 02.04.2020
International Application No. PCT/JP2019/037882
International Filing Date 26.09.2019
IPC
H01L 23/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
H01L 23/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 25/04 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H05K 3/28 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
22Secondary treatment of printed circuits
28Applying non-metallic protective coatings
CPC
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 23/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
H01L 23/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
H01L 25/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
H05K 3/28
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
22Secondary treatment of printed circuits
28Applying non-metallic protective coatings
Applicants
  • 株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • 野村 忠志 NOMURA, Tadashi
  • 古矢 新 FURUYA, Shin
  • 小出澤 徹 KOIDESAWA, Toru
  • 楠 元彦 KUSUNOKI, Motohiko
  • 小田 哲也 ODA, Tetsuya
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2018-18255427.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MODULE AND PRODUCTION METHOD THEREFOR
(FR) MODULE ET SON PROCÉDÉ DE PRODUCTION
(JA) モジュールおよびその製造方法
Abstract
(EN)
This module (101) is provided with: a substrate (1) that has a principal surface (1a) and a lateral surface (1c); an electronic component that is mounted on the principal surface (1a); an encapsulation resin (2) that covers both the principal surface (1a) and the electronic component; and a shielding film (5) that covers a surface (2u) of the encapsulation resin (2) and the lateral surface (1c) of the substrate (1). The encapsulation resin (2) contains: a resin component (7) including an organic resin as a main component; and a granular filler (8) including an inorganic oxide as a main component. Some of the grains of the filler (8) are partially exposed out of the resin component (7) at the surface of the encapsulation resin (2) that is in contact with the shielding film (5). The surface of the resin component (7) contains a nitrogen functional group. The shielding film (5) is formed of a metal that is classified both as a passive metal and as a transition metal, or an alloy containing said metal.
(FR)
L'invention concerne un module (101) comportant : un substrat (1) qui a une surface principale (1a) et une surface latérale (1c) ; un composant électronique qui est monté sur la surface principale (1a) ; une résine d'encapsulation (2) qui recouvre à la fois la surface principale (1a) et le composant électronique ; et un film de blindage (5) qui recouvre une surface (2u) de la résine d'encapsulation (2) et la surface latérale (1c) du substrat (1). La résine d'encapsulation (2) contient : un composant de résine (7) comprenant une résine organique en tant que composant principal ; et une charge granulaire (8) comprenant un oxyde inorganique en tant que composant principal. Certains des grains de la charge (8) sont partiellement exposés hors du composant de résine (7) au niveau de la surface de la résine d'encapsulation (2) qui est en contact avec le film de blindage (5). La surface du composant de résine (7) contient un groupe fonctionnel azoté. Le film de blindage (5) est formé d'un métal qui est classé à la fois en tant que métal passif et en tant que métal de transition, ou un alliage contenant ledit métal.
(JA)
モジュール(101)は、主面(1a)および側面(1c)を有する基板(1)と、主面(1a)に実装された電子部品と、主面(1a)および前記電子部品を覆う封止樹脂(2)と、封止樹脂(2)の表面(2u)および基板(1)の側面(1c)を覆うシールド膜(5)とを備える。封止樹脂(2)は、有機樹脂を主成分とする樹脂成分(7)と、無機酸化物を主成分とする粒状のフィラー(8)とを含む。シールド膜(5)と接する封止樹脂(2)の表面では、フィラー(8)の一部の粒は部分的に樹脂成分(7)から露出しており、樹脂成分(7)の表面は窒素官能基を含み、シールド膜(5)は、不動態金属でありかつ遷移金属である金属または当該金属を含む合金で形成されている。
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