Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020067246 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Publication Number WO/2020/067246
Publication Date 02.04.2020
International Application No. PCT/JP2019/037766
International Filing Date 26.09.2019
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
C23C 18/31 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, i.e. electroless plating
31Coating with metals
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C23C 18/31
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
16by reduction or substitution, e.g. electroless plating
31Coating with metals
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 守田 聡 MORITA Satoshi
  • 飽本 正巳 AKIMOTO Masami
  • 森川 勝洋 MORIKAWA Katsuhiro
  • 水永 耕市 MIZUNAGA Kouichi
  • 岩下 光秋 IWASHITA Mitsuaki
  • 金子 聡 KANEKO Satoshi
Agents
  • 永井 浩之 NAGAI Hiroshi
  • 中村 行孝 NAKAMURA Yukitaka
  • 朝倉 悟 ASAKURA Satoru
  • 森 秀行 MORI Hideyuki
Priority Data
2018-18283427.09.2018JP
2019-06337328.03.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract
(EN)
A substrate processing device is provided with: a rotational drive mechanism for a rotary table holding a substrate; an electric heater which is provided on the rotary table so as to rotate with the rotary table and heats the substrate; a power reception electrode which is provided on the rotary table so as to rotate with the rotary table, and which is electrically connected to the electric heater; a feed electrode which contacts the power reception electrode to supply drive power to the electric heater via the power reception electrode; an electrode moving mechanism which causes the feed electrode and the power reception electrode to come into and out of contact with each other; a power feeding unit which supplies drive power to the feed electrode; a processing cup surrounding the rotary table; at least one processing liquid nozzle for supplying a processing liquid to the substrate; a processing liquid supply mechanism for supplying at least an electroless plating liquid to the processing liquid nozzle as a processing liquid; and a control unit which controls the electrode moving mechanism, the power feeding unit, the rotational drive mechanism, and the processing liquid supply mechanism.
(FR)
L'invention concerne un dispositif de traitement de substrat comprenant : un mécanisme d'entraînement en rotation pour une table rotative contenant un substrat ; un dispositif de chauffage électrique qui est disposé sur la table rotative de façon à tourner avec la table rotative et chauffe le substrat ; une électrode de réception d'énergie qui est disposée sur la table rotative de façon à tourner avec la table rotative, et qui est électriquement connectée au dispositif de chauffage électrique ; une électrode d'alimentation qui entre en contact avec l'électrode de réception d'énergie pour fournir de l'énergie d'entraînement au dispositif de chauffage électrique par l'intermédiaire de l'électrode de réception d'énergie ; un mécanisme de déplacement d'électrode qui amène l'électrode d'alimentation et l'électrode de réception d'énergie à entrer et à sortir en contact l'une avec l'autre ; une unité d'alimentation en energie qui fournit une puissance d'entraînement à l'électrode d'alimentation ; une coupelle de traitement entourant la table rotative ; au moins une buse de liquide de traitement pour fournir un liquide de traitement au substrat ; un mécanisme d'alimentation en liquide de traitement pour fournir au moins un liquide de dépôt autocatalytique à la buse de liquide de traitement en tant que liquide de traitement ; et une unité de commande qui commande le mécanisme de déplacement d'électrode, l'unité d'alimentation en energie, le mécanisme d'entraînement en rotation et le mécanisme d'alimentation en liquide de traitement.
(JA)
基板処理装置は、基板を保持した回転テーブルを回転駆動機構と、回転テーブルと一緒に回転するように回転テーブルに設けられ基板を加熱する電気ヒーターと、回転テーブルと一緒に回転するように回転テーブルに設けられ、電気ヒーターに電気的に接続された受電電極と、受電電極と接触して受電電極を介して電気ヒーターに駆動電力を供給する給電電極と、給電電極と受電電極とを相対的に接離させる電極移動機構と、給電電極に駆動電力を供給する給電部と、回転テーブルの周囲を囲む処理カップと、基板に処理液を供給する少なくとも1つの処理液ノズルと、処理液ノズルに処理液として少なくとも無電解メッキ液を供給する処理液供給機構と、電極移動機構、給電部、回転駆動機構および処理液供給機構を制御する制御部とを備える。
Latest bibliographic data on file with the International Bureau