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1. WO2020067215 - III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR PRODUCING SAME

Publication Number WO/2020/067215
Publication Date 02.04.2020
International Application No. PCT/JP2019/037707
International Filing Date 25.09.2019
IPC
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
C23C 16/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/14 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
C23C 16/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
H01L 21/205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • DOWAエレクトロニクス株式会社 DOWA ELECTRONICS MATERIALS CO., LTD. [JP]/[JP]
Inventors
  • 渡邉 康弘 WATANABE Yasuhiro
Agents
  • 杉村 憲司 SUGIMURA Kenji
Priority Data
2018-18455528.09.2018JP
2019-17455625.09.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR PRODUCING SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT À SEMI-CONDUCTEUR AU NITRURE DE GROUPE III ET SON PROCÉDÉ DE PRODUCTION
(JA) III族窒化物半導体発光素子およびその製造方法
Abstract
(EN)
The present invention addresses the problem of providing: a III nitride semiconductor light-emitting element, which allows a change in light-emitting output over time to be suppressed and has excellent light-emitting output in comparison with the prior art; and a method for producing the same. The III nitride semiconductor light-emitting element 100 according to the present invention has a light emission wavelength of 200-350 nm, and comprises, in the following order, an n-type layer 30, a light-emitting layer 40, an electronic block layer 60 and a p-type contact layer 70. The electronic block layer 60 has a co-doped region layer 60c. The p-type contact layer 60 is a p-type AlxGa1-xN (0 ≦ x ≦ 0.1). The thickness of the p-type contact layer 60 is 300 nm or more.
(FR)
La présente invention aborde le problème de la fourniture : d'un élément électroluminescent à semi-conducteur au nitrure de groupe III, qui permet de supprimer toute variation de la sortie électroluminescente dans le temps et qui présente une excellente sortie électroluminescente par rapport à l'état de la technique ; et de son procédé de production. L'élément électroluminescent à semi-conducteur au nitrure de groupe III 100 selon la présente invention a une longueur d'onde d'émission de lumière de 200 à 350 nm, et comprend, dans l'ordre suivant, une couche de type n 30, une couche électroluminescente 40, une couche de bloc électronique 60 et une couche de contact de type p 70. La couche de bloc électronique 60 est dotée d'une couche de région co-dopée 60c. La couche de contact de type p 60 est un AlxGa1-xN de type p (0 ≦ x ≦ 0,1). L'épaisseur de la couche de contact de type p 60 est supérieure ou égale à 300 nm.
(JA)
発光出力の経時変化の抑制ができ、かつ、従来よりも優れた発光出力を有するIII族窒化物半導体発光素子およびその製造方法を提供する。本発明のIII族窒化物半導体発光素子100は、発光波長が200nm~350nmであり、n型層30と、発光層40と、電子ブロック層60と、p型コンタクト層70とをこの順に備え、電子ブロック層60がコドープ領域層60cを有しており、p型コンタクト層60はp型AlGa1-xN(0≦x≦0.1)であり、p型コンタクト層60の厚さが300nm以上である。
Also published as
Latest bibliographic data on file with the International Bureau