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1. WO2020067183 - UNDERLAYER FILM FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES AND PATTERN FORMING METHOD

Publication Number WO/2020/067183
Publication Date 02.04.2020
International Application No. PCT/JP2019/037643
International Filing Date 25.09.2019
IPC
G03F 7/11 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
C08F 220/10 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
C08F 220/10
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
G03F 7/11
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
11having cover layers or intermediate layers, e.g. subbing layers
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applicants
  • JSR株式会社 JSR CORPORATION [JP]/[JP]
Inventors
  • 峯岸 信也 MINEGISHI Shinya
  • 片切 崇 KATAGIRI Takashi
  • 辻 孝史 TSUJI Takafumi
  • 西野 晃太 NISHINO Kota
  • 小松 裕之 KOMATSU Hiroyuki
  • 大西 裕也 ONISHI Yuya
Agents
  • 天野 一規 AMANO Kazunori
Priority Data
2018-18414628.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) UNDERLAYER FILM FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES AND PATTERN FORMING METHOD
(FR) COMPOSITION DE FORMATION DE FILM DE SOUS-COUCHE POUR PROCESSUS DE RÉSERVE MULTICOUCHE ET PROCÉDÉ DE FORMATION DE MOTIF
(JA) 多層レジストプロセス用下層膜形成組成物及びパターン形成方法
Abstract
(EN)
The purpose of the present invention is to provide: an underlayer film forming composition for multilayer resist processes, which is capable of suppressing the occurrence of a crack in a silicon-containing film during a multilayer resist process, while being capable of reducing warp of a substrate, and which is capable of forming a resist underlayer film that exhibits excellent removability; and a pattern forming method. The present invention is an underlayer film forming composition for multilayer resist processes, which contains a solvent and a polymer having one or more kinds of first structural units that are derived from an acrylic acid ester, and which is configured such that the content ratio of the first structural units relative to all the structural units constituting the polymer is 65% by mole or more.
(FR)
Le but de la présente invention est de fournir : une composition de formation de film de sous-couche pour des processus de réserve multicouche qui est capable d'éliminer l'apparition d'une fissure dans un film contenant du silicium pendant un processus de réserve multicouche tout en étant capable de réduire la déformation d'un substrat et qui est capable de former un film de sous-couche de réserve qui présente une excellente aptitude à être enlevé ; et un procédé de formation de motif. La présente invention concerne une composition de formation de film de sous-couche pour des processus de réserve multicouche qui contient un solvant et un polymère ayant un ou plusieurs types de premiers motifs constitutifs qui sont dérivés d'un ester d'acide acrylique, et qui est conçue de telle sorte que le rapport de teneur des premiers motifs constitutifs par rapport à tous les motifs constitutifs constituant le polymère est de 65 % en moles ou plus.
(JA)
多層レジストプロセスにおけるケイ素含有膜のクラックの発生を抑制でき、基板の反りを低減でき、かつ除去性に優れるレジスト下層膜を形成することができる多層レジストプロセス用下層膜形成組成物及びパターン形成方法の提供を目的とする。本発明は、アクリル酸エステルに由来する1種又は2種以上の第1構造単位を有する重合体と、溶媒とを含有し、上記重合体を構成する全構造単位に対する上記第1構造単位の含有割合が65モル%以上である多層レジストプロセス用下層膜形成組成物である。
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