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1. WO2020067013 - COMPOSITE SUBSTRATE, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE

Publication Number WO/2020/067013
Publication Date 02.04.2020
International Application No. PCT/JP2019/037272
International Filing Date 24.09.2019
IPC
H03H 9/25 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H01L 41/09 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
09with electrical input and mechanical output
H01L 41/113 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive elements
113with mechanical input and electrical output
H01L 41/187 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive elements
187Ceramic compositions
H01L 41/312 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
H01L 41/337 2013.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
33Shaping or machining of piezo-electric or electrostrictive bodies
335by machining
337by polishing or grinding
CPC
H01L 41/09
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
H01L 41/113
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
113with mechanical input and electrical output ; , e.g. generators, sensors
H01L 41/187
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16Selection of materials
18for piezo-electric or electrostrictive devices ; , e.g. bulk piezo-electric crystals
187Ceramic compositions ; , i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials
H01L 41/312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
H01L 41/337
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
33Shaping or machining of piezo-electric or electrostrictive bodies
335by machining
337by polishing or grinding
H03H 3/08
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007for the manufacture of electromechanical resonators or networks
08for the manufacture of resonators or networks using surface acoustic waves
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 梅原 幹裕 UMEHARA, Motohiro
  • 光田 国文 MITSUDA, Kuniaki
  • 藤本 和良 FUJIMOTO, Kazuyoshi
Agents
  • 特許業務法人ブナ国際特許事務所 BUNA PATENT ATTORNEYS
Priority Data
2018-17880125.09.2018JP
2018-18181427.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COMPOSITE SUBSTRATE, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
(FR) SUBSTRAT COMPOSITE, ÉLÉMENT PIÉZOÉLECTRIQUE ET PROCÉDÉ DE FABRICATION DE SUBSTRAT COMPOSITE
(JA) 複合基板、圧電素子および複合基板の製造方法
Abstract
(EN)
A composite substrate of the present disclosure comprises: a piezoelectric substrate having a first surface, which is an element forming surface, and a second surface, which is a back surface thereof; a sapphire substrate having a third surface, which is disposed to face the second surface, and a fourth surface, which is a back surface thereof; and an alumina layer that has a fifth surface facing the second surface, and a sixth surface facing the third surface, and joins the second surface and the third surface, wherein the arithmetic average roughness Ra of the third surface is 0.1 μm or more and 0.5 μm or less, and the arithmetic average roughness Ra of the fifth surface is not more than 0.1 μm and smaller than the arithmetic average roughness Ra of the third surface.
(FR)
Un substrat composite selon la présente invention comprend : un substrat piézoélectrique ayant une première surface, qui est une surface de formation d'élément, et une deuxième surface, qui est sa surface arrière ; un substrat de saphir ayant une troisième surface, qui est disposée de manière à faire face à la deuxième surface, et une quatrième surface, qui est sa surface arrière ; et une couche d'alumine qui a une cinquième surface faisant face à la deuxième surface, et une sixième surface faisant face à la troisième surface, et qui joint la deuxième surface et la troisième surface, la rugosité moyenne arithmétique Ra de la troisième surface est supérieure ou égale à 0,1 μm et inférieure ou égale à 0,5 μm, et la rugosité moyenne arithmétique Ra de la cinquième surface est inférieure ou égale à 0,1 μm et inférieure à la rugosité moyenne arithmétique Ra de la troisième surface.
(JA)
本開示の複合基板は、素子形成面である第1面とその裏面である第2面とを有する圧電基板と、第2面と対向して配置される第3面とその裏面である第4面を有するサファイア基板と、第2面と対向する第5面と第3面と対向する第6面を有する。第2面と第3面を接合するアルミナ層とを備え、第3面の算術平均粗さRaは0.1μm以上0.5μm以下である。第5面の算術平均粗さRaは0.1μm以下であるとともに前記第3面の算術平均粗さRaよりも小さい。
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