Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020066873 - POLISHING METHOD FOR SILICON WAFER WITH REDUCED WEAR ON CARRIER, AND POLISHING LIQUID USED THEREIN

Publication Number WO/2020/066873
Publication Date 02.04.2020
International Application No. PCT/JP2019/036908
International Filing Date 20.09.2019
IPC
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/00 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
C09K 3/14 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
CPC
B24B 37/00
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
C09K 3/14
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
3Materials not provided for elsewhere
14Anti-slip materials; Abrasives
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 日産化学株式会社 NISSAN CHEMICAL CORPORATION [JP]/[JP]
Inventors
  • 山口 隼人 YAMAGUCHI Hayato
  • 棚次 悠介 TANATSUGU Yusuke
  • 石水 英一郎 ISHIMIZU Eiichiro
Agents
  • 特許業務法人浅村特許事務所 ASAMURA PATENT OFFICE, P.C.
Priority Data
2018-17950825.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLISHING METHOD FOR SILICON WAFER WITH REDUCED WEAR ON CARRIER, AND POLISHING LIQUID USED THEREIN
(FR) PROCÉDÉ DE POLISSAGE POUR PLAQUETTE DE SILICIUM À USURE RÉDUITE SUR SUPPORT, ET LIQUIDE DE POLISSAGE UTILISÉ DANS CELUI-CI
(JA) キャリアの摩耗が低減されたシリコンウエハーの研磨方法及びそれに用いる研磨液
Abstract
(EN)
Provided is a method that is for polishing a silicon wafer by a polishing device using a carrier holding the silicon wafer, and that can reduce wear on the carrier. In this polishing method, a polishing liquid used in the polishing device contains 0.1-5 mass%, in terms of the concentration of silica, silica particles comprising: silica particles (A) having an average primary particle size of 4-30 nm as measured by BET, and having an (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET; and silica particles (B) having an average primary particle size of more than 30 nm but not more than 50 nm as measured by BET, and having a (X2/X1) ratio of 1.2-1.8, where X2 (nm) represents an average particle size along the major axis thereof as calculated from a perspective projection image obtained using an electron beam, and X1 (nm) represents the average primary particle size as measured by BET, wherein the mass ratio of the silica particles (A) to the silica particles (B) is 100:0 to 85:15.
(FR)
La présente invention concerne un procédé qui permet de polir une plaquette de silicium avec un dispositif de polissage utilisant un support maintenant la plaquette de silicium, et qui permet de réduire l'usure sur le support. Dans ce procédé de polissage, un liquide de polissage utilisé dans le dispositif de polissage contient de 0,1 à 5 % en masse, en termes de concentration de silice, des particules de silice comprenant : des particules de silice (A) ayant une taille moyenne de particule primaire de 4 à 30 nm telle que mesurée par BET, et ayant un rapport (X2/X1) de 1,2 à 1,8, X2 (nm) représentant une taille moyenne de particule le long de son axe principal telle que calculée à partir d'une image de projection en perspective obtenue à l'aide d'un faisceau d'électrons, et X1 (nm) représentant la taille moyenne de particule primaire telle que mesurée par BET ; et des particules de silice (B) ayant une taille moyenne de particule primaire supérieure à 30 nm mais inférieure ou égale à 50 nm telle que mesurée par BET, et ayant un rapport (X2/X1) de 1,2 à 1,8, X2 (nm) représentant une taille moyenne de particule le long de son axe principal telle que calculée à partir d'une image de projection en perspective obtenue à l'aide d'un faisceau d'électrons, et X1 (nm) représentant la taille moyenne de particule primaire telle que mesurée par BET, le rapport de masse des particules de silice (A) sur les particules de silice (B) étant de 100:0 à 85:15.
(JA)
シリコンウエハーを保持したキャリアを用いた研磨装置によって当該シリコンウエハーの研磨を行う方法であって、キャリアの摩耗を低減が可能な研磨方法を提供する。 前記研磨装置で用いる研磨液が、BET法で測定される平均一次粒子径が4nm~30nmの粒子径であり、電子線による透過投影像により求めた長軸の平均粒子径を(X2)nmとし、BET法で測定される平均一次粒子径を(X1)nmとしたときの(X2/X1)比が1.2~1.8であるシリカ粒子(A)と、BET法で測定される平均一次粒子径が30nmを超え50nm以下の粒子径であり、電子線による透過投影像により求めた長軸の平均粒子径を(X2)nmとし、BET法で測定される平均一次粒子径を(X1)nmとしたときの(X2/X1)比が1.2~1.8であるシリカ粒子(B)とからなるシリカ粒子を0.1質量%~5質量%のシリカ濃度で含み、前記シリカ粒子(A):前記シリカ粒子(B)の質量比が100:0~85:15である、研磨方法である。
Latest bibliographic data on file with the International Bureau