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1. WO2020066843 - PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD

Publication Number WO/2020/066843
Publication Date 02.04.2020
International Application No. PCT/JP2019/036799
International Filing Date 19.09.2019
IPC
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
C23C 16/509 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
CPC
C23C 16/509
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
H05H 1/46
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP]/[JP]
Inventors
  • 岩尾 俊彦 IWAO, Toshihiko
Agents
  • 金本 哲男 KANEMOTO, Tetsuo
  • 萩原 康司 HAGIWARA, Yasushi
  • 扇田 尚紀 OGITA, Naoki
  • 三根 卓也 MINE, Takuya
Priority Data
2018-18090926.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
(FR) DISPOSITIF DE TRAITEMENT PAR PLASMA ET PROCÉDÉ DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置及びプラズマ処理方法
Abstract
(EN)
The plasma treatment device is for treating a workpiece with plasma and has: a placement section on which the workpiece is placed; a waveguide unit for introducing plasma-generating electromagnetic waves of a VHF band into the plasma treatment device; and a dielectric window through which the electromagnetic waves introduced by the waveguide unit are transmitted to a plasma treatment space formed on the workpiece-placement side of the placement section. The dielectric window is an annular member disposed so as to face the plasma-treatment-space side of the placement section, wherein multiple convex parts projecting toward the placement section are formed on the placement-section side along a circumferential direction at equal intervals, with the circumferential width of the convex parts being 1/8 to 3/8 of the wavelength of the electromagnetic waves in the dielectric window.
(FR)
L'invention concerne un dispositif de traitement par plasma qui est destiné à traiter une pièce avec un plasma et comporte : une section de placement sur laquelle la pièce est placée; une unité de guide d'ondes pour introduire des ondes électromagnétiques de génération de plasma d'une bande VHF dans le dispositif de traitement par plasma; et une fenêtre diélectrique à travers laquelle les ondes électromagnétiques introduites par l'unité de guide d'ondes sont transmises à un espace de traitement par plasma formé côté placement de pièce de la section de placement. La fenêtre diélectrique est un organe annulaire disposé de façon à faire face au côté espace de traitement par plasma de la section de placement, de multiples parties convexes faisant saillie vers la section de placement étant formées côté section de placement le long d'une direction circonférentielle à intervalles égaux, la largeur circonférentielle des parties convexes étant de 1/8 à 3/8 de la longueur d'onde des ondes électromagnétiques dans la fenêtre diélectrique.
(JA)
処理対象体をプラズマ処理するプラズマ処理装置であって、前記処理対象体が載置される載置部と、当該プラズマ処理装置内にプラズマ生成用のVHF帯の電磁波を導入する導波部と、前記導波部により導入された前記電磁波を、前記載置部の前記処理対象体載置側に形成されるプラズマ処理空間に透過させる誘電体窓と、を有し、前記誘電体窓は、前記載置部の前記プラズマ処理空間側と対向するように設けられた環状の部材であり、前記載置部の方向に突出する複数の凸部が周方向に沿って等間隔で並ぶように前記載置部側に形成され、前記凸部の周方向の幅は、前記誘電体窓内における前記電磁波の波長の1/8~3/8である。
Also published as
Latest bibliographic data on file with the International Bureau