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1. WO2020066824 - ACTINIC LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD

Publication Number WO/2020/066824
Publication Date 02.04.2020
International Application No. PCT/JP2019/036708
International Filing Date 19.09.2019
IPC
G03F 7/004 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 川端 健志 KAWABATA Takeshi
  • 後藤 研由 GOTO Akiyoshi
Agents
  • 伊東 秀明 ITOH Hideaki
  • 三橋 史生 MITSUHASHI Fumio
Priority Data
2018-17937025.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ACTINIC LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTINIQUE OU AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract
(EN)
A problem addressed by the present invention is to provide an actinic light-sensitive or radiation-sensitive resin composition that is capable of forming a resist film having superior in-plane uniformity of thickness, and that is capable of forming a pattern having superior LWR. Another problem addressed by the present invention is to provide a resist film, pattern formation method, and electronic device manufacturing method that use the abovementioned actinic light-sensitive or radiation-sensitive resin composition. The actinic light-sensitive or radiation-sensitive resin composition of the present invention contains: an acid-degradable resin; a photoacid generator A that generates an acid having a pKa of –1.40 or higher when irradiated with actinic light or radiation; a photoacid generator B that generates an acid, having a pKa that is at least 1.00 or higher than that of the acid generated by the photoacid generator A, when irradiated with actinic light or radiation, or a nitrogen-containing compound C that has a conjugate acid pKa at least 1.00 higher than that of the acid generated by the photoacid generator A; and a hydrophobic resin. A film formed using the abovementioned actinic light-sensitive or radiation-sensitive resin composition has a receding contact angle with water of 80.0° or greater.
(FR)
Un problème abordé par la présente invention est de fournir une composition de résine sensible à la lumière actinique ou au rayonnement qui est capable de former un film de réserve ayant une uniformité dans le plan de l'épaisseur qui est supérieure, et qui est capable de former un motif ayant une rugosité de bord de ligne (LWR) supérieure. Un autre problème abordé par la présente invention est de fournir un film de réserve, un procédé de formation de motif et un procédé de fabrication de dispositif électronique qui utilisent la composition de résine sensible à la lumière actinique ou au rayonnement susmentionnée. La composition de résine sensible à la lumière actinique ou au rayonnement de la présente invention contient : une résine dégradable à l'acide ; un générateur de photoacide A qui génère un acide ayant un pKa de –1,40 ou plus lorsqu'il est irradié par une lumière actinique ou par un rayonnement ; un générateur de photoacide B qui génère, lorsqu'il est irradié par une lumière actinique ou par un rayonnement, un acide ayant un pKa qui est supérieur ou égal à 1,00 ou supérieur à celui de l'acide généré par le générateur de photoacide A, ou un composé C qui contient de l'azote et qui a un pKa d'acide conjugué supérieur d'au moins 1,00 à celui de l'acide généré par le générateur de photoacide A ; et une résine hydrophobe. Un film formé à l'aide de la composition de résine sensible à la lumière actinique ou au rayonnement susmentionnée présente un angle de contact en retrait avec de l'eau à 80,0° ou plus.
(JA)
本発明の課題は、膜厚面内均一性に優れたレジスト膜を形成でき、且つ、LWRに優れたパターンを形成し得る感活性光線性又は感放射線性樹脂組成物を提供することにある。また、本発明の他の課題は、上記感活性光線性又は感放射線性樹脂組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法を提供することにある。 本発明の感活性光線性又は感放射線性樹脂組成物は、 酸分解性樹脂と、 活性光線又は放射線の照射によりpKaが-1.40以上の酸を発生する光酸発生剤Aと、 活性光線又は放射線の照射によって、上記光酸発生剤Aから発生する酸よりもpKaが1.00以上大きい酸を発生する光酸発生剤B、又は上記光酸発生剤Aから発生する酸よりも共役酸のpKaが1.00以上大きい含窒素化合物Cと、 疎水性樹脂と、を含む感活性光線性又は感放射線性樹脂組成物であり、 上記感活性光線性又は感放射線性樹脂組成物を用いて形成される膜の水に対する後退接触角が80.0°以上である。
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