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1. WO2020066806 - COPOLYMER AND POSITIVE RESIST COMPOSITION

Publication Number WO/2020/066806
Publication Date 02.04.2020
International Application No. PCT/JP2019/036643
International Filing Date 18.09.2019
IPC
C08F 220/22 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
22Esters containing halogen
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
CPC
C08F 220/22
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
22Esters containing halogen
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
Applicants
  • 日本ゼオン株式会社 ZEON CORPORATION [JP]/[JP]
Inventors
  • 星野 学 HOSHINO Manabu
Agents
  • 杉村 憲司 SUGIMURA Kenji
Priority Data
2018-17938225.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COPOLYMER AND POSITIVE RESIST COMPOSITION
(FR) COPOLYMÈRE ET COMPOSITION DE RÉSINE PHOTOSENSIBLE POSITIVE
(JA) 共重合体およびポジ型レジスト組成物
Abstract
(EN)
The present invention provides a copolymer which is suitable for use as a main chain scission type positive resist that has excellent heat resistance and is capable of forming a resist pattern having excellent resolution and clarity. A copolymer which comprises a monomer unit (A) represented by formula (I) and a monomer unit (B) represented by formula (II), and which has a molecular weight distribution of 1.7 or less. In the formulae, L represents a single bond or a divalent linking group; Ar represents an optionally substituted aromatic ring group; R1 represents an alkyl group; R2 represents an alkyl group, a halogen atom or a halogenated alkyl group; p represents an integer of from 0 to 5 (inclusive); and in cases where there are a plurality of R2 moieties, the R2 moieties may be the same as or different from each other.
(FR)
La présente invention concerne un copolymère qui est approprié pour être utilisé en tant que résine photosensible positive de type scission de chaîne principale, qui présente une excellente résistance à la chaleur et qui est en mesure de former un motif de résine photosensible présentant une excellente résolution et une excellente clarté. L'invention porte sur un copolymère qui comprend un motif monomère (A) représenté par la formule (I) et un motif monomère (B) représenté par la formule (II) et qui présente une distribution des poids moléculaires inférieure ou égale à 1,7. Dans les formules, L représente une simple liaison ou un groupe de liaison divalent ; Ar représente un groupe cyclique aromatique éventuellement substitué ; R1 représente un groupe alkyle ; R2 représente un groupe alkyle, un atome d'halogène ou un groupe alkyle halogéné ; p représente un nombre entier de 0 à 5 (valeurs extrêmes incluses) ; et dans les cas où il existe une pluralité de fragments R2, les fragments R2 peuvent être identiques ou différents les uns des autres.
(JA)
耐熱性に優れ、且つ、解像度および明瞭性に優れるレジストパターンの形成が可能な主鎖切断型のポジ型レジストとして良好に使用可能な共重合体を提供する。 下記式(I)で表される単量体単位(A)および下記式(II)で表される単量体単位(B)を有し、分子量分布が1.7以下である、共重合体。なお、式中、Lは、単結合または2価の連結基であり、Arは、置換基を有していてもよい芳香環基であり、Rは、アルキル基であり、Rは、アルキル基、ハロゲン原子またはハロゲン化アルキル基であり、pは、0以上5以下の整数であり、Rが複数存在する場合、それらは互いに同一でも異なっていてもよい。
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