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1. WO2020066797 - SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE STRUCTURE

Publication Number WO/2020/066797
Publication Date 02.04.2020
International Application No. PCT/JP2019/036598
International Filing Date 18.09.2019
IPC
H01L 21/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 25/065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/78
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H01L 27/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
CPC
H01L 21/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 21/822
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 25/065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
065the devices being of a type provided for in group H01L27/00
H01L 25/07
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
03all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/00
H01L 25/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; ; Multistep manufacturing processes thereof
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L51/00
H01L 27/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Applicants
  • 株式会社ソシオネクスト SOCIONEXT INC. [JP]/[JP]
Inventors
  • 岡本 淳 OKAMOTO Atsushi
  • 武野 紘宜 TAKENO Hirotaka
  • 王 文▲テイ▼ WANG Wenzhen
Agents
  • 特許業務法人前田特許事務所 MAEDA & PARTNERS
Priority Data
2018-18355328.09.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR PACKAGE STRUCTURE
(FR) DISPOSITIF DE CIRCUIT INTÉGRÉ À SEMI-CONDUCTEUR ET STRUCTURE DE BOÎTIER DE SEMI-CONDUCTEUR
(JA) 半導体集積回路装置および半導体パッケージ構造
Abstract
(EN)
Provided is a novel power wiring structure for effectively supplying power in a semiconductor integrated circuit device in which semiconductor chips are laminated. A first semiconductor chip (101) is laminated on a second semiconductor chip (102). A first power wiring (13) of the first semiconductor chip (101) is connected to second power wirings (31, 33) of the second semiconductor chip (102) through a plurality of first vias (21). The extending direction of the first power wiring (13) and that of the second power wirings (31, 33) are orthogonal to each other.
(FR)
L'invention concerne une nouvelle structure de câblage d'alimentation qui permet de réaliser une alimentation électrique efficace dans un dispositif de circuit intégré à semi-conducteur dans lequel sont stratifiées des puces en semi-conducteur. Une première puce en semi-conducteur (101) est placée sur une deuxième puce en semi-conducteur (102). Un premier câblage d'alimentation (13) de la première puce en semi-conducteur (101) est relié à des deuxièmes câblages d'alimentation (31, 33) de la deuxième puce en semi-conducteur (102) par le biais d'une pluralité de premiers trous d'interconnexion (21). La direction d'extension du premier câblage d'alimentation (13) et celle des deuxièmes câblages d'alimentation (31, 33) sont orthogonales l'une par rapport à l'autre.
(JA)
半導体チップが積層された半導体集積回路装置において、電源供給をより効果的に行うための新たな電源配線の構造を提供する。第1半導体チップ(101)は、第2半導体チップ(102)と積層されている。第1半導体チップ(101)の第1電源配線(13)が、複数の第1ビア(21)を介して、第2半導体チップ(102)の第2電源配線(31,33)と接続されている。第1電源配線(13)と第2電源配線(31,33)とは、延びる方向が直交している。
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